CY62136CV30LL-70BVXI Overview
The CY62136CV30LL-70BVXI is a 128K x 36-bit low-voltage CMOS Static RAM (SRAM) designed for high-speed and low-power applications. Operating at a 3.0 V core voltage, this memory device combines fast access times with a wide data bus width, making it ideal for industrial and telecommunications systems requiring robust data storage and rapid data retrieval. Its low power consumption and high integration level allow system designers to optimize board space and reduce overall system power requirements. The device is fully compatible with industry-standard SRAM interfaces, ensuring seamless integration into existing designs. For more detailed technical information, visit IC Manufacturer.
CY62136CV30LL-70BVXI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Size | 128K x 36 bits |
| Operating Voltage | 3.0 V ??10% |
| Access Time | 70 ns |
| Data Bus Width | 36 bits |
| Package Type | 72-pin Thin Small Outline Package (TSOP) |
| Standby Current | 10 ??A (typical) |
| Operating Temperature Range | -40??C to +85??C |
| Interface | Asynchronous SRAM |
| Data Retention Voltage | 2.0 V (min) |
| Pin Configuration | Ready for easy PCB layout and signal integrity |
CY62136CV30LL-70BVXI Key Features
- High-Speed Access: 70 ns access time enables rapid data retrieval, enhancing system performance in latency-sensitive applications.
- Wide Data Bus: 36-bit data width supports complex data structures and parallel processing, reducing cycle counts and improving throughput.
- Low Voltage Operation: 3.0 V supply reduces power consumption, contributing to lower overall energy usage in embedded and portable systems.
- Low Standby Current: Minimal leakage current in standby mode extends battery life and reduces heat dissipation in always-on devices.
- Industrial Temperature Range: Reliable operation from -40??C to +85??C ensures stability in harsh environments such as telecommunications and industrial controls.
- Compact Package: 72-pin TSOP offers a space-saving footprint, facilitating high-density PCB layouts without compromising performance.
- Asynchronous SRAM Interface: Simplifies system design by eliminating the need for complex timing control circuitry.
CY62136CV30LL-70BVXI Advantages vs Typical Alternatives
This SRAM offers a compelling balance of speed, power efficiency, and wide data width compared to typical alternatives. Its 3.0 V low-voltage operation reduces power consumption while maintaining fast 70 ns access times. The 36-bit data bus enhances data throughput, making it suitable for systems requiring high-bandwidth memory. Additionally, the broad industrial temperature range and low standby current contribute to improved reliability and energy efficiency, advantages critical in demanding industrial and telecommunications applications.
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Typical Applications
- High-speed buffer memory in telecommunications equipment where fast data access and wide data width optimize data flow and reduce latency.
- Embedded systems requiring low power, high-reliability SRAM for real-time data storage and processing.
- Industrial control systems operating under extended temperature ranges, utilizing the device??s robust environmental tolerance.
- Networking hardware such as routers and switches where asynchronous SRAM supports high-throughput packet buffering.
CY62136CV30LL-70BVXI Brand Info
The CY62136CV30LL-70BVXI is part of a renowned product line from a leading semiconductor manufacturer specializing in advanced memory solutions. This SRAM device embodies the brand’s commitment to delivering high-performance, low-power memory tailored for industrial and telecommunications markets. The brand??s focus on quality, reliability, and integration supports engineers in developing efficient systems that meet stringent industrial standards.
FAQ
What is the operating voltage range for this SRAM device?
The device operates at a nominal 3.0 V supply with a tolerance of ??10%. This low-voltage operation helps reduce power consumption compared to standard 5 V
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