CY7C1019CV33-12BVI Overview
The CY7C1019CV33-12BVI is a high-performance 1M x 8 static RAM designed for industrial and commercial applications requiring fast access times and low power consumption. Operating at 3.3V, this synchronous SRAM offers a 12 ns access time, making it suitable for data buffering and cache memory in embedded systems. Featuring a 32-pin plastic SOJ package, it balances compactness with reliable signal integrity. Its low power standby mode and CMOS technology ensure efficient energy use, beneficial in power-sensitive environments. This product is ideal for engineers and sourcing specialists seeking robust memory solutions from a trusted IC Manufacturer.
CY7C1019CV33-12BVI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Size | 1M x 8 bits (1 Megabit) |
| Access Time | 12 ns |
| Operating Voltage | 3.3 V ?? 0.3 V |
| Package Type | 32-pin Plastic SOJ |
| Data Retention Voltage | 2.0 V (minimum) |
| Input/Output | TTL Compatible |
| Operating Temperature Range | 0??C to +70??C |
| Power Consumption | 100 mW (typical active) |
| Standby Current | 100 ??A (maximum) |
CY7C1019CV33-12BVI Key Features
- Fast 12 ns access time enables rapid data retrieval, improving system throughput and reducing latency in time-critical applications.
- Low voltage 3.3 V operation reduces power consumption, making it ideal for energy-conscious embedded systems and portable devices.
- CMOS technology ensures minimal static power dissipation, enhancing device reliability and thermal performance.
- 32-pin SOJ packaging supports high-density PCB layouts while maintaining signal integrity and ease of assembly.
- Wide operating temperature range from 0??C to +70??C supports standard commercial environments without performance degradation.
- TTL-compatible inputs and outputs simplify integration with common digital logic families.
- Low standby current conserves battery life in power-sensitive applications during idle periods.
CY7C1019CV33-12BVI Advantages vs Typical Alternatives
This SRAM device offers a compelling combination of speed, low operating voltage, and power efficiency compared to typical asynchronous static RAM alternatives. Its 12 ns access time supports faster data processing, while CMOS technology minimizes power dissipation. The 3.3V supply voltage aligns with modern system standards, simplifying power management and improving integration. Additionally, the low standby current extends operational life in embedded and portable applications, making it a reliable and efficient memory solution.
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Typical Applications
- Embedded systems requiring high-speed data buffering and temporary storage, such as industrial controllers and communication equipment, benefit from its fast access and low power.
- Cache memory in microprocessor-based systems to enhance data throughput and performance.
- Networking devices needing reliable, quick-access memory for packet buffering and routing tables.
- Consumer electronics with moderate temperature requirements that demand efficient, low-power SRAM for system stability.
CY7C1019CV33-12BVI Brand Info
The CY7C1019CV33-12BVI is part of a family of SRAM products from a leading semiconductor manufacturer known for delivering reliable, industry-standard memory components. This device reflects the brand??s commitment to combining advanced CMOS technology with proven packaging and performance standards. It is engineered to meet the needs of designers and sourcing specialists focused on consistent quality and compatibility in their memory components.
FAQ
What is the typical power consumption of this SRAM during active operation?
The device typically consumes around 100 milliwatts during active operation at 3.3 V. This power level supports high-speed access while maintaining efficient energy use suitable for most embedded applications.
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Can the SRAM operate in low power standby mode, and what is the standby current?
Yes, the SRAM supports a low power standby mode with a maximum standby current of 100




