CY7C1019BV33-15ZI Overview
The CY7C1019BV33-15ZI is a high-performance, 1 Megabit Static RAM (SRAM) device designed for industrial and embedded memory applications. Operating at a 3.3V power supply, it delivers fast access times with a 15 ns speed grade, making it suitable for systems requiring rapid data retrieval and processing. The device features a 128K x 8-bit organization, which supports byte-wide data manipulation and seamless integration into a variety of digital systems. Its low power consumption and robust design ensure reliable operation in demanding environments. For more information, visit IC Manufacturer.
CY7C1019BV33-15ZI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Size | 1 Megabit (128K x 8 bits) |
| Access Time | 15 ns |
| Supply Voltage | 3.3 V ?? 0.3 V |
| Operating Temperature Range | 0??C to +70??C (Commercial) |
| Package Type | 44-pin Plastic Small Outline Integrated Circuit (SOIC) |
| Input/Output Type | TTL Compatible |
| Data Retention Voltage | 2.0 V (minimum) |
| Standby Current | 10 mA (max) |
| Operating Current | 85 mA (max) |
CY7C1019BV33-15ZI Key Features
- High-speed access: 15 ns access time enables rapid data retrieval, improving overall system throughput in time-critical applications.
- Low voltage operation: Designed for 3.3 V power supply, reducing power consumption while maintaining high performance, ideal for energy-efficient systems.
- Byte-wide data organization: 128K x 8-bit architecture simplifies interfacing with microprocessors and digital controllers for flexible memory management.
- Standard SOIC packaging: Facilitates easy integration onto printed circuit boards (PCBs) with common industrial assembly processes.
- Robust electrical characteristics: Supports TTL compatible inputs/outputs, ensuring reliable signal integrity and compatibility with a wide range of logic families.
- Low standby current: Minimizes power consumption during idle states, beneficial for battery-powered and low-power embedded solutions.
- Wide operating temperature range: Suitable for commercial-grade applications with consistent performance from 0??C to +70??C.
CY7C1019BV33-15ZI Advantages vs Typical Alternatives
This SRAM device offers faster access times and lower operating voltage compared to many traditional 5 V SRAMs, enhancing system speed and power efficiency. Its byte-wide architecture simplifies memory interfacing, while the low standby current extends operational life in energy-sensitive applications. The standard SOIC package ensures easy assembly and robust electrical compatibility, making it a preferred solution for embedded and industrial memory requirements.
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Typical Applications
- Cache memory in microprocessor-based systems requiring high-speed temporary storage for program and data execution.
- Buffer memory in telecommunications equipment for fast data handling and reduced latency.
- Embedded control systems in industrial automation where reliable, low-power SRAM supports real-time operations.
- Data logging and acquisition systems that benefit from rapid access and efficient power consumption.
CY7C1019BV33-15ZI Brand Info
This memory product is part of a well-established family of SRAM solutions known for their high reliability and performance in industrial and commercial electronics. The CY7C1019BV33-15ZI is manufactured by a leading semiconductor company specializing in integrated memory products. The brand emphasizes quality, consistency, and compatibility with a wide range of digital systems, supporting engineers and sourcing specialists with dependable components that meet demanding design criteria.
FAQ
What is the significance of the 15 ns access time in this SRAM?
The 15 ns access time indicates the maximum delay between a memory address input and the corresponding data output. This fast response is critical for high-speed computing and real-time processing systems,
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