The CY7C1399-20VC is a high-performance 4K x 8-bit static RAM (SRAM) designed for fast and reliable data storage in embedded systems. Offering a 20 ns access time, this device supports efficient read/write operations, making it suitable for applications demanding quick data retrieval and low latency. Packaged in a 28-pin DIP format, the SRAM provides robust compatibility with various microprocessors and digital systems. Its CMOS technology ensures low power consumption, enhancing system efficiency. The CY7C1399-20VC delivers stable performance across commercial operating temperatures, making it an ideal choice for industrial and communication equipment. For detailed specifications and purchasing, visit IC Manufacturer.
CY7C1399-20VC Technical Specifications
Parameter
Specification
Memory Organization
4096 x 8 bits (4K x 8)
Access Time
20 ns
Power Supply Voltage (Vcc)
5 V ?? 10%
Input/Output Voltage Level
TTL compatible
Operating Temperature Range
0??C to +70??C (Commercial)
Package Type
28-pin Dual In-line Package (DIP)
Standby Power Supply Voltage (Vcc Standby)
5 V ?? 10%
Power Dissipation
Typical active: 150 mW
Data Retention Voltage
2 V (typical)
CY7C1399-20VC Key Features
Fast 20 ns Access Time: Enables rapid data retrieval and writing, improving system throughput and reducing latency in timing-critical applications.
4K x 8-bit Memory Organization: Provides a compact yet versatile memory capacity suitable for buffer storage and temporary data holding in embedded systems.
CMOS Technology: Ensures low power consumption during active and standby modes, extending battery life in portable devices and reducing heat generation.
TTL-Compatible Inputs and Outputs: Facilitates seamless integration with a wide range of standard digital logic circuits and microprocessors.
28-Pin DIP Packaging: Supports easy prototyping and replacement in legacy systems requiring through-hole components.
Stable Operation Over Commercial Temperature Range: Guarantees reliable performance in typical industrial and consumer environments.
Low Power Standby Mode: Minimizes power dissipation when the device is not actively accessed, enhancing overall system energy efficiency.
CY7C1399-20VC Advantages vs Typical Alternatives
This SRAM device delivers a combination of fast access speed and low power consumption that outperforms many conventional memory alternatives. Its 20 ns timing supports high-speed data processing with minimal latency, while CMOS technology reduces power needs compared to older bipolar designs. Additionally, the TTL-compatible interface and standard DIP package facilitate straightforward integration and replacement within established system architectures, enhancing both reliability and maintainability.
Embedded system memory buffers requiring fast random access for data manipulation, such as in microcontroller-based designs and communication protocol handling.
Cache memory in industrial control and automation equipment, improving real-time data processing capabilities.
Temporary data storage in digital signal processing applications where quick read/write cycles are essential.
Legacy system upgrades and maintenance, where DIP packaging and TTL compatibility allow easy retrofitting without redesign.
CY7C1399-20VC Brand Info
The CY7C1399-20VC is part of a line of CMOS static RAM products known for their high speed and low power consumption. Manufactured with stringent process controls, this device exemplifies the brand??s commitment to delivering reliable semiconductor memory solutions optimized for industrial and commercial applications. Its design focuses on compatibility, robust performance, and ease of integration, supporting engineers and sourcing specialists in deploying stable memory components within diverse embedded system environments.
