CY62126DV30L-55BVI Overview
The CY62126DV30L-55BVI is a high-performance 128K x 8-bit low voltage static random-access memory (SRAM) device, designed for applications requiring fast and reliable data storage. Operating at 3.0 V with a 55 ns access time, it offers efficient power consumption and robust data retention for embedded systems. This SRAM supports asynchronous operation with separate control signals, ensuring compatibility with a wide range of microcontrollers and processors. Its compact 28-pin SOJ package enables easy PCB integration, making it ideal for industrial and communication equipment. For detailed technical and sourcing information, visit IC Manufacturer.
CY62126DV30L-55BVI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Density | 128K x 8 bits (1,048,576 bits) |
| Operating Voltage | 2.7 V to 3.6 V (typical 3.0 V) |
| Access Time | 55 ns |
| Data Retention Voltage | 1.5 V (minimum) |
| Operating Temperature Range | -40??C to +85??C |
| Package Type | 28-pin SOJ (Small Outline J-lead) |
| Standby Current | 10 ??A (typical) |
| Input/Output Compatibility | TTL compatible |
| Access Method | Asynchronous SRAM with separate Chip Enable (CE), Output Enable (OE), and Write Enable (WE) |
CY62126DV30L-55BVI Key Features
- Fast 55 ns access time: Enables high-speed data access critical for performance-sensitive embedded and communication systems.
- Low voltage operation at 3.0 V: Reduces power consumption while maintaining reliable operation, supporting energy-efficient designs.
- Asynchronous interface with separate control signals: Allows flexible timing and easy interfacing with a wide range of microprocessors and microcontrollers.
- Wide operating temperature range (-40??C to +85??C): Ensures stable performance in harsh industrial environments.
- Low standby current: Minimizes power draw during idle periods, extending system battery life in portable applications.
- TTL compatible inputs/outputs: Facilitates integration with legacy and modern digital logic circuits without additional level shifting.
- Compact 28-pin SOJ package: Saves board space and supports high-density PCB layouts.
CY62126DV30L-55BVI Advantages vs Typical Alternatives
This SRAM device offers a compelling balance of fast access speed and low voltage operation compared to standard 5 V SRAMs. Its 3.0 V supply and low standby current enhance power efficiency, critical for modern industrial and embedded systems. The asynchronous interface with distinct control signals simplifies integration and timing control, outperforming synchronous alternatives in certain latency-sensitive tasks. Additionally, the extended temperature range and compact SOJ package provide reliability and space-saving benefits often absent in other memory solutions.
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Typical Applications
- Embedded system memory buffer: Provides fast, low-power volatile storage for microcontrollers in industrial automation and control systems, enabling real-time data processing.
- Networking equipment: Supports high-speed data caching and temporary storage within routers and switches.
- Consumer electronics: Used in devices requiring quick access to configuration data and system parameters.
- Test and measurement instruments: Offers reliable and stable memory storage for temporary data logging and processing during device operation.
CY62126DV30L-55BVI Brand Info
This product is part of the CY62126DV series designed by a leading IC manufacturer specializing in high-reliability memory components. The brand focuses on delivering SRAM products that combine fast access times, low power consumption, and industrial-grade robustness. The 55BVI variant emphasizes superior speed and voltage efficiency, making it suitable for applications that demand both performance and reliability in challenging environments.
FAQ
What is the operating voltage range of this SRAM?
The device operates within a voltage range of 2.7 V to 3.6 V, with a typical operating voltage of 3.0 V. This low voltage
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