CY62256NLL-70SNCT 32K x 8 SRAM Memory IC – 28-Pin SOIC Package

  • This device provides fast, reliable static RAM storage, enabling efficient data retention and access for embedded systems.
  • With a 70ns access time, it supports quick memory retrieval, reducing system latency in time-sensitive applications.
  • The package design offers a compact footprint, allowing for optimized board space in dense hardware layouts.
  • Ideal for use in industrial control systems where stable, high-speed memory access ensures consistent performance.
  • Manufactured to meet rigorous quality standards, it delivers dependable operation under varied environmental conditions.
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CY62256NLL-70SNCT Overview

The CY62256NLL-70SNCT is a high-performance 32K x 8-bit static RAM device designed for industrial and embedded applications requiring fast and reliable memory access. Featuring a 70 ns access time, this non-volatile SRAM offers stable operation over a broad voltage range from 4.5V to 5.5V, making it suitable for systems with strict timing and power constraints. Its TTL-compatible inputs and outputs simplify integration into various digital systems. The device is packaged in a 28-pin SOJ form factor, supporting efficient board space utilization. For detailed specifications and procurement, visit IC Manufacturer.

CY62256NLL-70SNCT Technical Specifications

ParameterSpecification
Memory Size32K x 8 bits (256 Kbit)
Access Time70 ns
Operating Voltage4.5 V to 5.5 V
Data Retention Voltage2.0 V minimum
Input/Output TypeTTL Compatible
Package Type28-pin SOJ
Standby Current (ISB1)15 mA (max)
Operating Temperature0??C to +70??C

CY62256NLL-70SNCT Key Features

  • Fast 70 ns access time: Enables high-speed data retrieval crucial for performance-critical embedded systems.
  • Wide operating voltage range (4.5 V to 5.5 V): Ensures stable functionality across varying power supply conditions common in industrial environments.
  • TTL-compatible I/O interfaces: Simplifies system design by allowing direct interface with standard digital logic levels.
  • Low standby current: Helps reduce power consumption in idle states, extending system reliability and efficiency.
  • Non-volatile data retention: Maintains stored information at voltages as low as 2.0 V, supporting system data integrity during power interruptions.
  • Compact 28-pin SOJ packaging: Provides space-saving solution suitable for high-density circuit board layouts.
  • Industrial temperature range: Supports operation from 0??C to +70??C, meeting typical industrial environmental requirements.

CY62256NLL-70SNCT Advantages vs Typical Alternatives

This SRAM device offers a faster access time and lower standby current compared to many standard SRAMs, enhancing system responsiveness and energy efficiency. Its broad voltage tolerance and TTL compatibility improve integration flexibility, while non-volatile retention ensures data reliability under power fluctuations, outperforming volatile memory alternatives in demanding industrial contexts.

Typical Applications

  • Embedded systems requiring fast and reliable temporary data storage, such as microprocessor cache or buffer memory in industrial controllers.
  • Data logging equipment where quick memory access and retention during power loss are critical.
  • Communication systems needing stable memory interfaces compatible with TTL logic standards.
  • Consumer and industrial electronics that demand compact memory solutions with low power consumption and high reliability.

CY62256NLL-70SNCT Brand Info

The CY62256NLL-70SNCT is part of a well-established product line known for robust static RAM solutions tailored to industrial and embedded system applications. Designed and manufactured by a leading semiconductor provider, this device combines proven technology with stringent quality standards. Its consistent performance and reliability make it a trusted choice for engineers seeking dependable memory components with fast access times and low power profiles.

FAQ

What is the access time of this SRAM device?

The access time for this SRAM is 70 nanoseconds, meaning it can retrieve data within 70 ns after receiving an address input. This speed supports high-performance applications where timing is critical.

Can this memory retain data during power loss?

Yes, the device supports non-volatile data retention down to a minimum of 2.0 volts, allowing it to maintain stored information

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