CY7C199-25VI 4K x 8 FIFO Memory Buffer – 28-Pin DIP Package

CY7C199-25VI Overview

The CY7C199-25VI is a high-performance, 4K x 9-bit static RAM designed for applications requiring fast, reliable memory access. Featuring a 25ns access time, this component offers swift data retrieval, making it suitable for industrial and embedded systems. Its low power consumption and CMOS technology enhance operational efficiency while maintaining data integrity. The product is engineered to operate within a wide voltage range, ensuring compatibility with various system designs. Available in a standardized 28-pin PLCC package, the CY7C199-25VI supports seamless integration into existing circuits. For detailed specifications and purchasing options, visit IC Manufacturer.

CY7C199-25VI Technical Specifications

CY7C199-25VI Key Features

• Fast 25 ns access time: Enables rapid data processing, enhancing system throughput in time-critical applications.
• 4K x 9-bit memory architecture: Provides flexible 9-bit wide data storage, suitable for parity and error checking implementations.
• Low power CMOS design: Reduces overall power consumption, extending battery life in portable and embedded systems.
• TTL-compatible inputs and outputs: Ensures easy interfacing with standard logic families, simplifying system integration.
• Wide operating voltage tolerance: Supports stable operation across varying supply voltages, increasing design robustness.
• Standard 28-pin PLCC packaging: Facilitates straightforward mounting and replacement in existing hardware layouts.

CY7C199-25VI Advantages vs Typical Alternatives

This memory device offers a competitive edge through its precise 25 ns access time and low power CMOS technology. Compared to typical SRAM alternatives, it enables faster data retrieval while maintaining reduced power dissipation. The 9-bit data organization supports error detection schemes, improving system reliability. Its TTL compatibility and standard packaging simplify integration, making it a preferred choice for engineers seeking efficient, dependable memory solutions.

Typical Applications

• Embedded systems requiring compact, fast SRAM for buffering and cache memory, where consistent 25 ns access time improves real-time data handling performance.
• Industrial control units that demand reliable memory with low power draw for continuous operation.
• Communication devices leveraging fast, TTL-compatible SRAM for temporary data storage and quick access.
• Data acquisition systems utilizing the 9-bit data width for parity checking and error detection during high-speed data processing.

CY7C199-25VI Brand Info

The CY7C199-25VI is part of a well-established line of CMOS static RAMs known for their speed, power efficiency, and ease of integration. This product reflects the manufacturer??s commitment to delivering memory components that meet stringent industrial standards. With a focus on robust performance and compatibility, this device supports a wide range of applications requiring reliable, fast-access memory. Supported by comprehensive technical documentation and quality assurance, it is a trusted choice in the semiconductor memory market.

FAQ

What is the access time of the CY7C199-25VI and why is it important?

The access time is 25 nanoseconds, which defines how quickly data can be read from or written to the memory. This fast access speed is critical in applications where rapid data processing and minimal latency are required to maintain system performance.

Can the CY7C199-25VI operate at voltages lower than 5 V?

This SRAM is designed to operate at a standard 5 V supply with a tolerance of