CY7C1021CV33-15VXIT SRAM Memory IC, 1M x 8, 15ns Access Time, SOJ Package

  • This device provides high-speed synchronous static RAM, enabling fast data access for memory-intensive applications.
  • Operating frequency supports timing critical designs, ensuring efficient performance in complex systems.
  • The compact 44-pin TSOP package reduces board space, allowing denser component placement on PCBs.
  • Ideal for use in networking equipment, it helps manage large data buffers with low latency.
  • Manufactured with rigorous testing, the CY7C1021CV33-15VXIT ensures consistent operation under varied conditions.
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CY7C1021CV33-15VXIT Overview

The CY7C1021CV33-15VXIT is a high-performance 1M-bit static RAM designed for industrial and embedded system applications demanding fast and reliable data storage. Operating at a 3.3V power supply with a 15ns access time, this device supports a 128K x 8-bit organization, ensuring efficient memory management. It features low power consumption and a robust CMOS architecture, enhancing system stability and longevity. The device??s standardized JEDEC pinout and 44-pin TSOP II package facilitate seamless integration into complex circuits, making it ideal for engineers and sourcing specialists seeking dependable memory solutions. For detailed technical support, visit IC Manufacturer.

CY7C1021CV33-15VXIT Technical Specifications

ParameterSpecification
Memory Size1 Mbit (128K x 8)
Access Time15 ns
Supply Voltage (Vcc)3.3 V ?? 0.3 V
Operating Temperature Range-40??C to +85??C
Package Type44-pin TSOP II
Data Retention Voltage2.0 V (minimum)
Input/Output TypeThree-state TTL compatible
Standby Current10 ??A (typical)
Operating Current55 mA (max)

CY7C1021CV33-15VXIT Key Features

  • Fast 15 ns Access Time: Enables rapid data retrieval and writing, critical for high-speed embedded applications.
  • 3.3V Low Voltage Operation: Supports modern low-power system designs, reducing overall power consumption and heat dissipation.
  • Wide Operating Temperature Range (-40??C to +85??C): Ensures reliable performance in harsh industrial environments.
  • Standard 44-pin TSOP II Package: Facilitates compact PCB layouts and ease of assembly in space-constrained systems.
  • Low Standby Current: Ideal for battery-powered devices or systems requiring energy efficiency during idle periods.
  • Three-State Outputs: Enables bus-oriented applications by allowing multiple devices to share a common data bus without conflict.
  • JEDEC Standard Pinout: Simplifies design-in and compatibility with existing memory controller architectures.

CY7C1021CV33-15VXIT Advantages vs Typical Alternatives

This SRAM device offers a compelling balance of speed, power efficiency, and industrial-grade temperature tolerance compared to typical alternatives. Its 15 ns access time outperforms many standard SRAMs, while the 3.3V operation reduces system power requirements. The low standby current and JEDEC standard pin configuration simplify system integration and ensure reliable operation in demanding industrial environments, providing engineers with a robust and efficient memory solution.

Typical Applications

  • Embedded systems requiring fast, volatile memory for temporary data storage and processing, such as industrial controllers and data acquisition units.
  • Networking equipment where high-speed buffer memory is critical for data flow management and packet switching.
  • Telecommunications devices that demand low power consumption and reliable memory access under varying environmental conditions.
  • Consumer electronics and portable instruments that benefit from low standby current and compact packaging for space-efficient design.

CY7C1021CV33-15VXIT Brand Info

The CY7C1021CV33-15VXIT is part of a portfolio of high-quality semiconductor memory products designed and manufactured by a leading IC provider specializing in CMOS SRAM technology. Known for rigorous quality standards and industry compliance, this brand delivers memory devices optimized for demanding industrial and embedded applications. The product combines advanced semiconductor fabrication with comprehensive testing to ensure long-term reliability and consistent performance in critical systems.

FAQ

What is the main memory organization of this SRAM device?

This SRAM features a 1 Mbit capacity organized as 128K words by 8 bits, providing an optimal balance between memory density and ease of data access suitable for embedded and industrial applications.

What voltage levels does this memory operate at?

The device operates primarily at a 3

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