CY62126DV30LL-55BVXI 256Kb SRAM Memory IC – 30ns Access Time, SOIC-28 Package

CY62126DV30LL-55BVXI Overview

The CY62126DV30LL-55BVXI is a high-performance static RAM (SRAM) device designed for fast and efficient data storage in industrial and embedded applications. Offering a 128K x 8-bit memory organization, it delivers reliable low power consumption with a 3.0 V power supply, ensuring compatibility with modern low-voltage systems. Its fast access time of 55 ns supports high-speed data processing, ideal for buffering and caching functions. Packaged in a compact 28-pin SOJ form factor, this SRAM balances performance, power efficiency, and footprint for integration in space-sensitive designs. For more detailed information, visit the IC Manufacturer.

CY62126DV30LL-55BVXI Technical Specifications

CY62126DV30LL-55BVXI Key Features

• High-speed 55 ns access time: Enables rapid read/write cycles, enhancing system throughput for real-time applications.
• Low-voltage operation at 3.0 V: Supports energy-efficient designs and compatibility with low-power embedded systems.
• Ultra-low standby current: Minimizes power consumption during idle periods, extending device and system longevity.
• Compact 28-pin SOJ package: Facilitates easy PCB integration in size-constrained applications without sacrificing pin accessibility.
• Reliable data retention at reduced voltage: Maintains stored information during power fluctuations or low-voltage conditions.
• Industrial temperature range support: Ensures stable operation in a variety of environmental conditions, broadening application scope.

CY62126DV30LL-55BVXI Advantages vs Typical Alternatives

This SRAM device offers a compelling combination of fast access speed and low power consumption at 3.0 V operation, which is superior to many traditional 5 V SRAMs. Its ultra-low standby current and compact SOJ package improve power efficiency and integration, making it ideal for modern embedded systems requiring high reliability and minimal energy use. The broad operating temperature range further enhances its robustness compared to typical commercial alternatives.

Typical Applications

• Buffer memory and cache in microprocessor-based systems, providing high-speed temporary data storage to optimize processing efficiency.
• Embedded systems requiring low-voltage memory solutions for portable and battery-powered devices.
• Industrial control equipment that demands reliable operation across a wide temperature range.
• Communication devices needing fast, low-power memory for data buffering and signal processing.

CY62126DV30LL-55BVXI Brand Info

This device is part of a specialized SRAM series engineered for performance and reliability by a leading semiconductor manufacturer. Designed to meet stringent industrial and commercial standards, the product line offers high-speed access times combined with low power operation. The brand is recognized for delivering innovative memory solutions tailored for embedded and industrial applications, ensuring seamless integration and long-term stability in critical systems.

FAQ

What is the memory capacity and organization of this SRAM device?

The SRAM provides a memory capacity of 128K ?? 8 bits, which equates to 131,072 words each 8 bits wide. This organization supports versatile data handling for a wide range of embedded and industrial applications requiring moderate memory size with fast access.

What voltage levels does the device operate at, and how does this affect power consumption?

This SRAM operates at a nominal voltage of 3.