CY7C109BN-20VCT Overview
The CY7C109BN-20VCT is a high-performance 256K x 8-bit static random-access memory (SRAM) device designed to deliver fast access times and reliable operation in industrial and commercial applications. Operating at a 20 ns access time, this memory module supports efficient data storage and retrieval with low power consumption. Packaged in a compact 32-pin VCT configuration, it facilitates easy integration into complex systems requiring robust memory solutions. Engineers and sourcing specialists will appreciate its stable operation across a broad voltage range, making it suitable for varied environments. For more detailed technical resources and purchasing options, visit IC Manufacturer.
CY7C109BN-20VCT Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Size | 256K x 8 bits |
| Access Time | 20 ns |
| Operating Voltage | 5 V ?? 10% |
| Power Supply Current (ICC) | 85 mA (max) |
| Input/Output Voltage Levels | TTL Compatible |
| Package Type | 32-pin Plastic VCT |
| Standby Current (ISB1) | 10 mA (max) |
| Operating Temperature Range | 0??C to +70??C |
| Data Retention Voltage | 2.0 V (min) |
CY7C109BN-20VCT Key Features
- Fast 20 ns Access Time: Enables high-speed data processing essential for time-sensitive applications, boosting system throughput and responsiveness.
- Wide Operating Voltage Range: Supports 5 V ?? 10%, ensuring compatibility with standard TTL logic levels and enhancing design flexibility.
- Low Power Consumption: Incorporates standby current as low as 10 mA, reducing energy use during idle periods and improving overall system efficiency.
- TTL-Compatible I/O: Simplifies integration into existing digital circuits without additional level shifting, facilitating seamless interfacing.
- Robust 32-Pin VCT Package: Provides reliable physical and electrical connections with a compact footprint suited for dense PCB layouts.
- Stable Operation Over Industrial Temperature Range: Ensures dependable performance in diverse environmental conditions, critical for industrial applications.
CY7C109BN-20VCT Advantages vs Typical Alternatives
This SRAM device offers a competitive advantage through its fast 20 ns access time combined with low standby current, delivering both speed and energy efficiency. Compared to typical alternatives, it maintains stable operation within a broad voltage and temperature range, which enhances reliability in demanding environments. Its TTL-compatible inputs and outputs enable straightforward system integration, reducing design complexity and time-to-market.
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Typical Applications
- High-speed cache memory in embedded systems requiring rapid data access and minimal latency to optimize processor performance.
- Buffer storage in communication equipment to temporarily hold data streams for synchronization and error correction.
- Memory expansion in industrial controllers where stable and reliable SRAM is critical for real-time control algorithms.
- Data storage in measurement instruments where quick read/write cycles improve overall test throughput and accuracy.
CY7C109BN-20VCT Brand Info
The CY7C109BN-20VCT is part of a well-established line of static RAM products designed for high reliability and performance. Produced under stringent quality controls, this memory device is tailored for engineers seeking dependable semiconductor components that meet rigorous industrial and commercial standards. Its brand reputation is built on delivering consistent quality, longevity, and robust electrical characteristics, making it a trusted choice for critical system memory requirements.
FAQ
What is the primary memory organization of this SRAM device?
The device is organized as 256K words by 8 bits, providing a total memory capacity of 2 megabits. This organization allows straightforward byte-wide data access suitable for a wide range of embedded applications.
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What is the significance of the 20 ns access time?
A 20 nanosecond access time means the memory can deliver data within 20 billionths of a second after the address is presented. This fast speed supports high-performance computing environments and real-time processing where rapid data retrieval is essential.