CY62256V-70SNCT Overview
The CY62256V-70SNCT is a 32K x 8-bit CMOS static RAM designed for high-speed memory applications requiring low power consumption and reliable data retention. Featuring a fast access time of 70 nanoseconds, this memory device supports efficient read and write cycles, making it suitable for various embedded systems and industrial applications. Its 28-pin dual in-line package (DIP) form factor ensures easy integration into existing designs, while the CMOS technology provides excellent noise immunity and low static power dissipation. For sourcing and detailed technical support, consult IC Manufacturer.
CY62256V-70SNCT Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Size | 32K x 8 bits (256 Kbits) |
| Access Time | 70 ns (nanoseconds) |
| Operating Voltage | 5 V ??10% |
| Package Type | 28-pin DIP |
| Data Retention Voltage | 2 V (typical) |
| Operating Temperature Range | 0??C to +70??C |
| Standby Current | 10 ??A (max) |
| Active Current | 30 mA (max) |
CY62256V-70SNCT Key Features
- Fast 70 ns access time: Enables quick data retrieval and storage, improving overall system performance in timing-critical applications.
- Low power CMOS technology: Reduces power consumption, beneficial for battery-operated and energy-sensitive embedded systems.
- 28-pin DIP package: Simplifies hardware integration and prototyping, compatible with standard socket and PCB layouts.
- 2 V data retention voltage: Ensures data integrity during power-down states, supporting reliable non-volatile memory functions.
- Industrial temperature range: Suitable for a wide range of environmental conditions, enhancing device reliability in harsh industrial settings.
- High noise immunity: CMOS design minimizes susceptibility to electrical noise, providing stable operation in electrically noisy environments.
- Full static operation: No refresh cycles required, simplifying memory controller design and reducing system complexity.
CY62256V-70SNCT Advantages vs Typical Alternatives
This static RAM offers superior speed with a 70 ns access time compared to many older memory types, while CMOS technology ensures lower power consumption and higher noise immunity. Its data retention capability at reduced voltages and wide temperature tolerance make it more reliable for industrial and embedded applications than typical dynamic RAM or EEPROM alternatives. The straightforward DIP packaging also facilitates easy system integration and reduces development time.
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Typical Applications
- Embedded system memory: Ideal for microcontroller-based designs requiring fast, reliable SRAM for program code or data storage in industrial and consumer electronics.
- Cache memory: Functions effectively as cache in computing systems where quick data access and minimal latency are critical.
- Buffer memory: Suitable for data buffering in communication equipment and data acquisition systems due to its static operation and fast access.
- Battery-backed memory: Can be used in low-power devices requiring data retention during power interruptions, enhancing system robustness.
CY62256V-70SNCT Brand Info
The CY62256V-70SNCT is part of the CY series of high-performance CMOS static RAMs produced by a leading semiconductor manufacturer focused on delivering reliable memory solutions for industrial and embedded applications. This product line is recognized for its balance of speed, low power consumption, and robustness, making it a trusted choice for engineers and sourcing specialists requiring dependable SRAM devices in their designs.
FAQ
What is the access time of the CY62256V-70SNCT?
The device provides a fast access time of 70 nanoseconds, which allows for quick read and write operations. This speed supports efficient performance in timing-critical applications such as embedded systems and buffering.
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What voltage levels does this SRAM operate at?
This SRAM operates at a standard 5 V supply voltage with a ??10




