IMIFS781BTT High-Speed Power MOSFET Transistor – TO-220 Package

  • IMIFS781BTT is a high-speed MOSFET designed for efficient power switching in electronic circuits.
  • It offers low on-resistance, reducing energy loss and improving overall system efficiency during operation.
  • The compact SOT-223 package minimizes board space, facilitating integration into densely packed designs.
  • Ideal for DC-DC converters, it enhances power management by delivering fast switching and thermal stability.
  • Built to meet industry reliability standards, it ensures consistent performance under varied environmental conditions.
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IMIFS781BTT Overview

The IMIFS781BTT is a high-performance insulated-gate bipolar transistor (IGBT) designed for industrial power switching applications. Engineered to deliver robust switching capabilities with low conduction losses, this device supports efficient power management in demanding environments. Its compact package and optimized thermal characteristics ensure reliable operation under high current and voltage conditions. Ideal for motor drives, inverters, and power supplies, the IMIFS781BTT enhances system efficiency and durability. For detailed technical support and sourcing, visit IC Manufacturer.

IMIFS781BTT Technical Specifications

Parameter Specification
Collector-Emitter Voltage (VCES) 1200 V
Continuous Collector Current (IC) 78 A
Gate-Emitter Voltage (VGE) ??20 V
Maximum Power Dissipation (Ptot) 264 W
Operating Junction Temperature (Tj) -55??C to +150??C
Turn-On Delay Time (td(on)) 60 ns
Turn-Off Delay Time (td(off)) 170 ns
Package Type TO-247-3L

IMIFS781BTT Key Features

  • High Voltage Blocking Capability: Supports up to 1200 V, enabling use in high power industrial systems with enhanced safety margins.
  • Robust Continuous Current Rating: Handles 78 A continuous current to ensure reliable performance in demanding load conditions.
  • Fast Switching Performance: With turn-on and turn-off delay times of 60 ns and 170 ns respectively, it reduces switching losses, increasing overall system efficiency.
  • Wide Operating Temperature Range: Operates reliably from -55??C to +150??C, suitable for harsh industrial environments.
  • Standard TO-247 Package: Facilitates easy mounting and thermal management in power modules and assemblies.
  • Enhanced Thermal Dissipation: Maximum power dissipation rated at 264 W helps maintain device stability under high load.

IMIFS781BTT Advantages vs Typical Alternatives

This device offers superior voltage and current handling compared to standard IGBTs, combined with fast switching speeds that reduce power losses. Its robust thermal performance and wide temperature tolerance ensure greater reliability in industrial applications. Integration into existing systems is streamlined by the common TO-247 package, making it a preferred choice over lower-rated or less efficient alternatives.

Typical Applications

  • Industrial motor drives requiring efficient, high-current switching for variable speed control and precise torque management in harsh operating conditions.
  • Power inverters in renewable energy systems, leveraging the device??s high voltage and fast switching to improve energy conversion efficiency.
  • Uninterruptible power supplies (UPS) where dependable power switching and thermal reliability are critical for continuous operation.
  • Industrial power supplies and converters demanding robust performance and thermal management for stable output under variable loads.

IMIFS781BTT Brand Info

The IMIFS781BTT is manufactured by a leading semiconductor producer specializing in power electronics components. This product line is recognized for its high quality, reliability, and performance in industrial power control systems. Designed with advanced manufacturing technologies, the IMIFS781BTT embodies the brand??s commitment to delivering durable components that meet rigorous industrial standards and support efficient power management applications worldwide.

FAQ

What is the maximum voltage rating for this transistor?

The device has a maximum collector-emitter voltage rating of 1200 volts. This ensures it can safely handle high voltage levels typical in industrial power applications without breakdown or damage.

How does the IMIFS781BTT perform in terms of switching speed?

It features fast switching capabilities with a turn-on delay time of 60 nanoseconds and a turn-off delay time of 170 nanoseconds. These characteristics help minimize switching losses and improve overall system efficiency.

What package type does this IGBT use and why is it important?

This IGBT is housed in a TO-247-3L package, which is widely

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