JANS2N5666U3/TR NPN Transistor by JAN – High Gain, TO-39 Metal Can Package

  • This transistor provides efficient switching and amplification, enhancing overall circuit performance.
  • With a specified voltage rating, it supports stable operation under demanding electrical conditions.
  • The compact package type allows for board-space savings in dense electronic assemblies.
  • Ideal for use in power management circuits, it helps maintain system stability and control.
  • Manufactured to meet rigorous quality standards, ensuring consistent reliability in various environments.
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JANS2N5666U3/TR Overview

The JANS2N5666U3/TR is a high-performance bipolar NPN transistor designed for industrial and military-grade applications requiring robust switching and amplification capabilities. This transistor features a low noise figure and high gain bandwidth product, making it suitable for precision analog circuits and high-frequency operation. Packaged in a TO-18 metal can, it ensures enhanced thermal dissipation and mechanical reliability under harsh environmental conditions. The JANS2N5666U3/TR meets stringent military standards, offering dependable performance for critical systems. Sourcing specialists and engineers will find this device ideal for applications demanding durability, stable gain, and efficient power handling. For detailed sourcing and technical support, visit IC Manufacturer.

JANS2N5666U3/TR Key Features

  • High current gain (hFE): Provides efficient signal amplification for reliable circuit performance.
  • Low noise operation: Ensures minimal signal distortion, critical for sensitive analog and RF applications.
  • TO-18 hermetically sealed metal package: Enhances thermal stability and protects against environmental stress, increasing long-term reliability.
  • Wide operating voltage range: Supports versatile deployment across various industrial and military power supply conditions.

JANS2N5666U3/TR Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Power Dissipation (Ptot) 500 mW
Transition Frequency (fT) 100 MHz
DC Current Gain (hFE) 40 to 160 ??
Package Type TO-18 Metal Can ??

JANS2N5666U3/TR Advantages vs Typical Alternatives

This transistor offers superior reliability due to its hermetically sealed metal package, outperforming plastic-encapsulated alternatives in harsh environments. Its wide voltage tolerance and high gain enable stable operation in demanding industrial and military applications. The low noise characteristic and high transition frequency provide enhanced signal integrity, making it a preferred choice over standard general-purpose transistors.

Typical Applications

  • Precision amplifier circuits in military communication devices, where low noise and high gain stability are essential for signal clarity and reliability.
  • Switching applications in industrial control systems requiring rugged components capable of withstanding temperature extremes.
  • High-frequency oscillator circuits benefiting from its high transition frequency and stable gain performance.
  • General purpose amplification in aerospace electronics where component dependability and long-term stability are critical.

JANS2N5666U3/TR Brand Info

The JANS2N5666U3/TR is produced under a military specification (JAN) standard, ensuring strict quality and reliability requirements are met. The ??2N5666U3?? designation reflects its classification as a high-performance NPN transistor, while the ??/TR?? suffix indicates tape and reel packaging optimized for automated assembly processes. This product is part of a trusted line of semiconductors designed for demanding environments, backed by rigorous testing and certification.

FAQ

What is the maximum operating temperature for the JANS2N5666U3/TR?

The transistor is designed to operate reliably within a wide temperature range, typically up to 200??C junction temperature, due to its metal can package and robust semiconductor construction, making it suitable for harsh industrial and military environments.

How does the TO-18 package benefit the transistor??s performance?

The TO-18 metal can package provides excellent thermal conductivity and hermetic sealing, protecting the transistor from moisture, dust, and mechanical stress. This improves long-term reliability and ensures stable electrical performance under extreme operating conditions.

Can this transistor be used in RF applications?

Yes, the transistor??s high transition frequency (fT) of approximately 100 MHz and low noise characteristics make it suitable for certain RF amplification and oscillator circuits, supporting moderate frequency ranges typically encountered in communication systems.

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What is the typical DC current gain (hFE) range and why is it important?

The DC current gain ranges from 40 to 160, which provides ample flexibility for amplification needs. A stable and predictable hFE is critical for designing reliable analog circuits that require consistent signal amplification.

Is the JANS2N5666U3/TR compliant with military standards?

Yes, the JAN prefix signifies compliance with military standards for quality and reliability. The device undergoes rigorous screening and testing to ensure it meets stringent specifications for use in defense and aerospace systems.

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