JANTXV2N2945AUB/TR Diode Rectifier by ON Semiconductor, DO-41 Package

  • This device performs high-speed switching to optimize circuit efficiency and reduce power loss.
  • It supports a maximum voltage rating, ensuring stable operation in demanding electrical environments.
  • The compact package type enables board-space savings, facilitating integration into space-constrained designs.
  • Ideal for power management in industrial automation, enhancing system responsiveness and energy control.
  • Manufactured with rigorous quality controls to maintain consistent performance and long-term reliability.
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产品上方询盘

JANTXV2N2945AUB/TR Overview

The JANTXV2N2945AUB/TR is a high-reliability NPN bipolar junction transistor tailored for industrial and military-grade applications, offering robust performance under demanding conditions. Featuring a complementary transistor structure, it supports high current and voltage ratings, making it suitable for power amplification and switching tasks. This device demonstrates excellent gain characteristics and a durable junction temperature range, ensuring stable operation in harsh environments. Packaged for easy integration, it meets stringent quality standards, enhancing system reliability in critical applications. For sourcing and detailed technical data, visit IC Manufacturer.

JANTXV2N2945AUB/TR Key Features

  • High Collector-Emitter Voltage: Supports up to 60 V, enabling reliable operation in high-voltage circuits and power switching applications.
  • Collector Current Capacity: Handles continuous collector currents up to 600 mA, suitable for medium-power amplification tasks.
  • Complementary Pair Design: Works effectively with JANTXV2N2222AUB/TR as a matched pair, simplifying push-pull amplifier designs.
  • Military-Grade Quality: Complies with JAN (Joint Army-Navy) standards, ensuring enhanced reliability and longevity in mission-critical systems.

JANTXV2N2945AUB/TR Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Power Dissipation (Ptot) 625 mW
Transition Frequency (fT) 100 MHz
Gain Bandwidth Product 100 MHz (typical)
Package TO-18 Metal Can
Junction Temperature (Tj) ?65 ??C to +200 ??C

JANTXV2N2945AUB/TR Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to standard general-purpose BJTs, providing enhanced reliability and thermal tolerance. Its military-grade qualification ensures consistent performance in extreme environments. The complementary transistor design simplifies circuit implementations, while the TO-18 package optimizes heat dissipation and mechanical durability, making it advantageous for engineers seeking rugged and precise semiconductor components.

Typical Applications

  • Linear and switching amplifiers in industrial control systems, benefiting from the transistor??s high current handling and voltage ratings to maintain signal integrity.
  • Push-pull amplifier stages, utilizing complementary pairs for efficient power amplification with reduced distortion.
  • Signal processing circuits in aerospace and defense equipment, where reliability under temperature extremes is critical.
  • General-purpose switching in power management modules requiring robust, long-lasting transistor solutions.

JANTXV2N2945AUB/TR Brand Info

This device is part of a proven series of bipolar junction transistors designed and manufactured to meet stringent military and industrial standards. The JANTXV2N2945AUB/TR specifically is sourced from a reputable supplier known for precision semiconductor components that deliver consistent quality and durability. The brand ensures rigorous testing and adherence to JAN specifications, making it a trusted choice for engineers and sourcing specialists involved in mission-critical electronics design and production.

FAQ

What is the maximum collector current for this transistor?

The maximum continuous collector current is rated at 600 mA, allowing it to handle moderate power levels in amplification and switching applications without compromising reliability.

What temperature range can this transistor operate within?

This transistor supports a wide junction temperature range from ?65 ??C up to +200 ??C, making it suitable for environments with extreme temperature variations such as aerospace and military systems.

How does the complementary pair feature benefit circuit design?

The complementary transistor pairing facilitates push-pull amplifier configurations, improving efficiency and reducing distortion in output stages. Using matched pairs simplifies design and ensures balanced performance.

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产品中间询盘

What packaging does this transistor use and why is it important?

The TO-18 metal can package provides excellent thermal conductivity and mechanical protection. This packaging helps maintain device stability and longevity, especially in harsh operating conditions.

Is this transistor suitable for high-frequency applications?

Yes, with a transition frequency typically around 100 MHz, this transistor supports moderate high-frequency operation, making it appropriate for many signal processing and amplification tasks in industrial electronics.

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