JANSR2N3501U4/TR Overview
The JANSR2N3501U4/TR is a high-performance bipolar junction transistor designed for robust switching and amplification tasks in industrial and military-grade applications. Engineered to deliver reliable operation under demanding electrical and environmental conditions, it supports medium power handling with stable gain and low noise characteristics. This transistor is optimized for use in power amplifiers, drivers, and switching circuits where durability and consistent performance are critical. Available in a durable TO-39 package, it ensures ease of integration and solid thermal performance. For more detailed information, visit IC Manufacturer.
JANSR2N3501U4/TR Key Features
- High voltage capability: Supports collector-emitter voltages up to 90 V, enabling operation in various power supply environments.
- Moderate current handling: Collector current rating of 8 A provides sufficient drive capability for medium-power switching and amplification.
- TO-39 hermetic metal can package: Enhances thermal dissipation and mechanical reliability, suitable for rugged industrial conditions.
- Stable DC current gain: Guarantees consistent amplification characteristics, critical for precision analog circuit designs.
JANSR2N3501U4/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 90 | V |
| Collector-Base Voltage (VCBO) | 120 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 8 | A |
| Power Dissipation (Ptot) | 100 | W |
| DC Current Gain (hFE) | 15 to 70 | ?? |
| Transition Frequency (fT) | 15 | MHz |
| Operating Junction Temperature (TJ) | ?65 to +200 | ??C |
JANSR2N3501U4/TR Advantages vs Typical Alternatives
This transistor offers superior voltage and current handling compared to general-purpose BJTs, making it ideal for demanding industrial applications. Its robust package design ensures enhanced thermal management and long-term reliability. With a wide operating temperature range and stable gain, it outperforms many standard transistors in precision and endurance, reducing failure rates and maintenance costs in critical systems.
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Typical Applications
- Power switching circuits in military and aerospace equipment requiring high voltage and current tolerance with reliable thermal characteristics.
- Linear amplifiers where stable gain and low noise are essential to maintain signal integrity.
- Driver stages for motors and solenoids in industrial automation systems demanding ruggedness and high power handling.
- Voltage regulation and power supply circuits benefiting from the transistor??s robust breakdown voltages and thermal stability.
JANSR2N3501U4/TR Brand Info
The JANSR2N3501U4/TR is manufactured under strict quality standards to meet military and industrial specifications. The product brand emphasizes reliability and performance consistency, supported by comprehensive testing for electrical and environmental stress. This transistor is part of a well-established series known for its durability in harsh operating environments, ensuring confidence in critical system designs.
FAQ
What is the maximum collector current supported by this transistor?
The device supports a maximum collector current of 8 amperes, allowing it to handle moderate power levels suitable for switching and amplification applications in industrial and military circuits.
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What package type does this transistor come in and why is it important?
It is housed in a TO-39 hermetic metal can package, which provides excellent thermal dissipation and mechanical protection. This packaging is essential for maintaining reliable operation under harsh environmental conditions.
Can this transistor operate in high-temperature environments?
Yes, the device is rated to operate over a junction temperature range from ?65??C up to +200??C, making it suitable for applications that experience extreme temperature variations.
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What is the range of the DC current gain (hFE) for this transistor?
The DC current gain ranges from 15 to 70, ensuring consistent amplification performance across different operating points and enhancing circuit stability.
Is this transistor suitable for high-frequency applications?
With a transition frequency of approximately 15 MHz, this transistor can be used in moderate-frequency amplifier and switching applications, but it is not optimized for very high-frequency RF circuits.
