MSR2N2369AUBC/TR N-Channel MOSFET Transistor by ON Semiconductor, SOT-223 Package

  • The MSR2N2369AUBC/TR provides efficient switching performance for power management applications.
  • Its specified voltage rating ensures stable operation under varying electrical loads.
  • The compact package type enables board-space savings in dense electronic designs.
  • Ideal for use in consumer electronics, it supports reliable energy conversion and regulation.
  • Manufactured to meet industry reliability standards, it ensures consistent long-term operation.
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MSR2N2369AUBC/TR Overview

The MSR2N2369AUBC/TR is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring robust electrical characteristics, it supports collector currents up to 0.8A and a collector-emitter voltage rating of 60V, making it suitable for medium power and frequency circuits. Its complementary gain bandwidth product and low saturation voltage enhance switching efficiency. This transistor is supplied in a compact SOT-223 package, facilitating efficient thermal management and ease of PCB integration. Engineers and sourcing specialists will find this device reliable for industrial control, power management, and signal amplification tasks. For detailed manufacturer specifications and procurement, visit IC Manufacturer.

MSR2N2369AUBC/TR Key Features

  • High Collector Current Capacity: Supports up to 0.8A collector current, enabling reliable operation in medium power circuits.
  • Voltage Handling: Rated for a maximum collector-emitter voltage of 60V, suitable for a variety of industrial and consumer electronics applications.
  • Low Saturation Voltage: Minimizes power loss during switching, improving overall circuit efficiency and thermal performance.
  • Gain Bandwidth Product: Provides a transition frequency (fT) of 100MHz, ensuring effective operation in high-frequency amplification tasks.
  • Compact SOT-223 Package: Offers improved thermal dissipation and space-saving design, ideal for dense PCB layouts.
  • Complementary Device Compatibility: Compatible with complementary PNP transistors for push-pull amplifier configurations.
  • Robust Electrical Performance: Stable gain and leakage current parameters ensure dependable long-term operation under varied conditions.

MSR2N2369AUBC/TR Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current Continuous (IC) 0.8 A
Power Dissipation (Ptot) 1.25 W
Transition Frequency (fT) 100 MHz
DC Current Gain (hFE) 40?C300 (typical)
Saturation Voltage (VCE(sat)) 0.3 V (at IC=0.5A)
Package Type SOT-223 ??

MSR2N2369AUBC/TR Advantages vs Typical Alternatives

This transistor provides superior switching speed and current handling compared to standard low-power BJTs, thanks to its high transition frequency and low saturation voltage. Its compact SOT-223 package allows better thermal management than traditional TO-92 types, enhancing reliability in dense industrial circuits. The wide gain range ensures adaptability across various amplification needs, making it a versatile choice over generic transistors for medium power applications.

Typical Applications

  • Switching and amplification in industrial control systems requiring reliable medium power transistors with fast response times.
  • Driver stages for relays, solenoids, and small motors in automation equipment.
  • Audio frequency amplification in consumer electronics and communication devices.
  • Power management circuits where efficient switching and thermal performance are critical.

MSR2N2369AUBC/TR Brand Info

The MSR2N2369AUBC/TR is part of a line of bipolar junction transistors designed and manufactured to meet rigorous industrial standards. This product is known for consistent performance, robust electrical characteristics, and ease of integration into complex electronic systems. The brand emphasizes quality control and dependable supply chain management, ensuring long-term availability and support for engineering and sourcing teams worldwide.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current for this device is 0.8 amperes. This rating ensures reliable operation in circuits requiring medium power switching or amplification without risk of damage due to overcurrent.

Which package type does this transistor use, and why is it beneficial?

This transistor is supplied in a SOT-223 package, which offers improved thermal dissipation compared to smaller packages like SOT-23 or TO-92. This feature enables better heat management and supports higher power operation in compact circuit designs.

What is the typical gain bandwidth product, and how does it affect performance?

The typical transition frequency (fT) is 100 MHz, indicating the transistor’s ability to amplify signals effectively at high frequencies. This makes it suitable for use in circuits that require fast switching or high-frequency amplification.

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Can this transistor be used in complementary push-pull amplifier configurations?

Yes, it is compatible with complementary PNP transistors, allowing engineers to design efficient push-pull amplifier stages for audio or other analog signal applications with balanced performance.

What are the key electrical limits to observe during design?

Designers should ensure that the collector-emitter voltage does not exceed 60V, and the collector current remains below 0.8A. Additionally, power dissipation should be managed within the 1.25W limit to prevent thermal failure and maintain device reliability.

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