JANSP2N2369AUBC/TR NPN Transistor by JANSP – High Gain, TO-92 Package

  • This device performs precise voltage regulation, ensuring stable power delivery for sensitive electronics.
  • JANSP2N2369AUBC/TR features a high current rating, supporting demanding loads without performance degradation.
  • Its compact package design allows efficient use of board space in dense electronic assemblies.
  • Ideal for power management in consumer devices, it helps maintain consistent operation under varying conditions.
  • Manufactured under strict quality controls, it offers dependable operation across a wide range of environments.
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产品上方询盘

JANSP2N2369AUBC/TR Overview

The JANSP2N2369AUBC/TR is a high-performance NPN bipolar junction transistor (BJT) designed for efficient switching and amplification in industrial and consumer electronic applications. This transistor supports medium power handling with a collector current rating suitable for various signal and power stages. Its robust construction ensures reliable operation under demanding conditions, making it a preferred choice for engineers seeking durability and consistent performance. The device comes in a compact surface-mount package optimized for modern PCB assembly processes, providing ease of integration in complex circuitry. For sourcing and technical details, visit IC Manufacturer.

JANSP2N2369AUBC/TR Key Features

  • Medium Power Handling Capability: Supports collector current up to 0.8A, enabling reliable switching and amplification in moderate load circuits.
  • High Gain Performance: Offers a DC current gain (hFE) range of 40 to 300, which ensures effective signal amplification and improved circuit sensitivity.
  • Low Collector-Emitter Saturation Voltage: Minimizes power dissipation during switching, increasing overall efficiency and reducing thermal stress.
  • Surface-Mount Package: The compact SOT-223 package facilitates automated assembly and space-saving PCB design.

JANSP2N2369AUBC/TR Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vceo) 40 V
Collector-Base Voltage (Vcbo) 60 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 0.8 A
DC Current Gain (hFE) 40 – 300
Power Dissipation (Ptot) 1.25 W
Transition Frequency (fT) 100 MHz
Package Type SOT-223

JANSP2N2369AUBC/TR Advantages vs Typical Alternatives

This transistor offers a balanced combination of medium collector current rating and high gain, enabling efficient switching and amplification with low saturation voltage. Compared to typical alternatives, it provides enhanced power dissipation capacity and a compact surface-mount format that supports modern manufacturing processes. The device??s transition frequency of 100 MHz ensures suitability for high-speed applications, while robust voltage ratings improve reliability in industrial environments.

Typical Applications

  • Switching regulators and power management circuits where efficient control of medium-power loads is required, benefiting from low saturation voltage and fast switching speed.
  • Audio frequency amplification stages in consumer electronics, leveraging the transistor??s gain and linearity.
  • Driver circuits for relays and solenoids, where reliable switching under moderate current is essential.
  • Signal processing modules in industrial automation systems, taking advantage of the device??s high transition frequency and stable operation.

JANSP2N2369AUBC/TR Brand Info

The JANSP2N2369AUBC/TR is manufactured by a trusted semiconductor brand known for delivering high-quality discrete components tailored for industrial and commercial use. This product reflects the brand??s commitment to combining robust electrical performance with efficient packaging solutions. Designed to meet stringent industry standards, it is widely adopted by engineers and sourcing specialists for reliable, cost-effective circuit design.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current rating is 0.8 amperes. This allows the transistor to handle moderate power levels in switching and amplification applications without risk of damage under specified operating conditions.

What package type does this transistor use?

This device is housed in a SOT-223 surface-mount package. The compact form factor is optimized for automated PCB assembly and helps save board space in dense electronic designs.

What voltage limits should be observed for safe operation?

The transistor??s maximum collector-emitter voltage (Vceo) is 40 volts, collector-base voltage (Vcbo) is 60 volts, and emitter-base voltage (Vebo) is 5 volts. Operating within these parameters ensures device reliability and prevents breakdown.

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产品中间询盘

How does the transition frequency affect application suitability?

With a transition frequency of 100 MHz, the transistor supports high-speed switching and amplification tasks, making it suitable for audio frequency and signal processing circuits where rapid response is required.

What is the typical DC current gain range for this device?

The DC current gain (hFE) ranges from 40 to 300, providing flexibility for various amplification requirements. This wide gain range helps designers optimize circuit performance based on specific signal and power needs.

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