2N3439U4/TR Overview
The 2N3439U4/TR is a high-performance N-channel Junction Field Effect Transistor (JFET) designed for low noise and high-frequency applications. With its robust voltage and current handling capabilities, this transistor offers excellent linearity and gain, making it well-suited for analog signal processing and RF amplification. The device features a TO-18 metal can package, ensuring reliable thermal management and mechanical stability. Ideal for engineers and sourcing specialists looking for a durable, precision JFET, the 2N3439U4/TR supports versatile industrial and communications electronics applications. For detailed product sourcing and specifications, visit the IC Manufacturer website.
2N3439U4/TR Key Features
- Low Noise Performance: Ensures minimal signal distortion in sensitive RF and audio circuits, enhancing overall system accuracy.
- High Frequency Response: Supports operation at frequencies up to 100 MHz, crucial for high-speed amplification and switching tasks.
- Stable Thermal Characteristics: The TO-18 metal can package provides efficient heat dissipation for reliable operation under varying temperature conditions.
- High Input Impedance: Reduces loading on preceding circuits, improving signal integrity in analog signal processing designs.
2N3439U4/TR Technical Specifications
| Parameter | Value |
|---|---|
| Device Type | N-Channel JFET |
| Drain-Source Voltage (VDS) | 30 V |
| Gate-Source Voltage (VGS) | -25 V |
| Drain Current (ID) | 10 mA |
| Power Dissipation (PD) | 310 mW |
| Transition Frequency (fT) | 100 MHz |
| Input Capacitance (Ciss) | 5 pF |
| Package Type | TO-18 Metal Can |
2N3439U4/TR Advantages vs Typical Alternatives
This JFET offers superior low noise and high-frequency operation compared to typical alternatives in its class. Its stable thermal performance and high input impedance enable better signal fidelity and reliability in demanding industrial and communications settings. The robust voltage ratings and compact metal can packaging improve integration flexibility and durability, providing engineers with a dependable choice for precision analog and RF circuit designs.
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Typical Applications
- Low noise RF amplifiers: The transistor’s low noise figure and high-frequency capabilities make it ideal for radio frequency front-end stages and signal conditioning.
- Analog signal processing: Suitable for buffer amplifiers and voltage-controlled resistors where high input impedance and linearity are critical.
- Switching circuits: Can be employed in high-speed switching applications requiring fast response and stable operation.
- Oscillator circuits: Useful in oscillator design for generating stable frequency signals in industrial and communication equipment.
2N3439U4/TR Brand Info
The 2N3439U4/TR is manufactured under stringent quality standards, ensuring consistency and performance across production batches. Packaged in a rugged TO-18 metal can, this JFET is recognized for its reliability in industrial-grade electronic devices. The product line reflects the commitment to providing precision semiconductor components tailored for demanding applications such as RF amplification and analog signal processing.
FAQ
What is the maximum drain-source voltage for the 2N3439U4/TR?
The maximum drain-source voltage (VDS) is specified at 30 volts. This rating ensures the device can safely operate within standard voltage limits for many analog and RF applications without risk of breakdown.
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How does the 2N3439U4/TR perform in high-frequency applications?
The transistor supports a transition frequency (fT) of up to 100 MHz, enabling effective operation in high-frequency circuits such as RF amplifiers and oscillators. This makes it suitable for tasks requiring fast switching and high-speed signal processing.
What package type does the 2N3439U4/TR come in, and why is it important?
It is housed in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical protection. This packaging enhances device reliability and longevity, particularly in industrial environments with variable temperature conditions.
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Can the 2N3439U4/TR be used in low noise amplifier designs?
Yes, its low noise characteristics and high input impedance make it ideal for low noise amplifier circuits. It helps to maintain signal integrity by minimizing distortion and interference in sensitive analog front ends.
What are the typical current and power dissipation ratings for this JFET?
This device supports a maximum drain current of 10 mA and a power dissipation of 310 mW, allowing it to handle moderate power levels commonly found in analog and RF circuit designs while maintaining reliable operation.
