JANSR2N5153U3 Overview
The JANSR2N5153U3 is a high-performance N-channel MOSFET designed for robust switching applications in industrial and automotive environments. Featuring a low on-resistance and fast switching capability, this device optimizes efficiency and thermal management in power control circuits. Its rugged construction ensures reliable operation across a wide temperature range, making it ideal for demanding electronic designs. Engineers and sourcing specialists can rely on this MOSFET for enhanced durability and consistent performance. For more information, visit IC Manufacturer.
JANSR2N5153U3 Key Features
- Low On-Resistance (RDS(on)): Minimizes conduction losses, improving power efficiency and reducing heat generation in switching applications.
- High Drain Current Capability: Supports robust load handling, essential for power management and motor control systems.
- Fast Switching Speed: Enables efficient operation in high-frequency circuits, reducing switching losses and improving overall circuit performance.
- Wide Operating Temperature Range: Ensures reliable functionality in harsh industrial and automotive environments.
- Enhanced ESD Protection: Increases device longevity by safeguarding against electrostatic discharge during handling and operation.
- Compact TO-220 Package: Facilitates easy integration and effective thermal dissipation in space-constrained designs.
JANSR2N5153U3 Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 4.5 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| On-Resistance (RDS(on)) | 0.055 ?? @ VGS = 10 V |
| Total Gate Charge (Qg) | 15 nC (typical) |
| Power Dissipation (PD) | 1.25 W |
| Operating Temperature Range | -55 ??C to +150 ??C |
| Package Type | TO-220 |
JANSR2N5153U3 Advantages vs Typical Alternatives
This MOSFET offers lower on-resistance than many standard components, directly translating to improved power efficiency and reduced thermal stress. Its high current capability and fast switching characteristics enable superior performance in demanding power control circuits. Compared to alternatives, the robust package and extended temperature range enhance device reliability and simplify system integration in industrial and automotive applications.
🔥 Best-Selling Products
-

Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
-

Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
-

Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
-

Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- Power management circuits in automotive systems where efficient switching and thermal stability are critical for long-term reliability.
- Motor control drivers requiring fast switching speeds and high current capacity to optimize performance.
- DC-DC converters and power supplies that benefit from low conduction losses and compact packaging.
- Industrial automation equipment relying on durable semiconductors capable of withstanding harsh environmental conditions.
JANSR2N5153U3 Brand Info
The JANSR2N5153U3 is produced by a leading semiconductor manufacturer known for delivering high-quality MOSFET devices tailored for industrial and automotive markets. This product line emphasizes reliability, efficiency, and ease of integration, supporting engineers in developing robust electronic systems. The brand??s commitment to stringent quality standards ensures consistent performance and longevity in demanding applications.
FAQ
What is the maximum voltage rating of this MOSFET?
The device is rated for a maximum drain-source voltage of 60 volts, making it suitable for a wide range of low to medium voltage power applications where reliable switching is required.
🌟 Featured Products
-

“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
-

QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
-

0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
-

1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
How does the on-resistance impact circuit performance?
Lower on-resistance reduces conduction losses during operation, which improves overall efficiency and decreases heat generation, thereby enhancing the thermal management of the circuit.
What package type is used, and what are its benefits?
This MOSFET is housed in a TO-220 package, which offers excellent thermal dissipation and mechanical stability, facilitating easier mounting and heat sinking in various electronic assemblies.
📩 Contact Us
Can this device operate in harsh temperature environments?
Yes, it supports an operating temperature range from -55 ??C to +150 ??C, ensuring dependable performance in industrial and automotive environments exposed to extreme temperatures.
Is this MOSFET suitable for high-frequency switching applications?
With its low total gate charge and fast switching speed, the device is well-suited for high-frequency switching circuits, minimizing switching losses and improving overall circuit efficiency.






