JANSR2N5152U3 Overview
The JANSR2N5152U3 is a high-performance NPN silicon transistor optimized for amplifier and switching applications in industrial electronics. Designed for reliable operation under demanding conditions, it delivers consistent gain and robust current handling, making it ideal for medium-power signal amplification and general-purpose switching tasks. Manufactured with precision to ensure stable electrical characteristics, this transistor supports efficient circuit integration and long-term durability. Engineers and sourcing specialists will find this device suitable for enhancing system performance, especially where dependable transistor operation is critical. For more information, visit IC Manufacturer.
JANSR2N5152U3 Key Features
- Medium Power Handling: Supports collector currents up to 600 mA, enabling robust performance in amplifier and switching circuits.
- High Gain (hFE): Offers a current gain range of 40 to 320, providing flexibility for varying amplification requirements and improved signal fidelity.
- Wide Voltage Ratings: With a collector-emitter voltage rating of 60 V, it suits a broad range of industrial voltage applications.
- Enhanced Thermal Stability: Features a maximum junction temperature of 200??C, ensuring reliable operation in high-temperature environments.
- Low Saturation Voltage: Minimizes power loss during switching, improving overall circuit efficiency.
- Standard TO-92 Package: Facilitates easy handling and integration into existing PCB layouts.
- Consistent Electrical Characteristics: Ensures predictable performance critical for precise control in electronic designs.
JANSR2N5152U3 Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Silicon |
| Collector-Emitter Voltage (Vceo) | 60 V |
| Collector-Base Voltage (Vcbo) | 80 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 600 mA |
| DC Current Gain (hFE) | 40 to 320 |
| Power Dissipation (Pc) | 400 mW |
| Transition Frequency (fT) | 100 MHz (typical) |
| Junction Temperature (Tj max) | 200??C |
| Package Type | TO-92 |
JANSR2N5152U3 Advantages vs Typical Alternatives
This transistor offers superior gain and power handling compared to many standard NPN devices in its class, supporting higher collector currents and voltage ratings. Its low saturation voltage reduces power dissipation, enhancing system efficiency. The robust thermal tolerance ensures reliable operation in harsh industrial environments. These advantages make it a preferred choice when stable, high-performance switching and amplification are essential in industrial and commercial electronics.
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Typical Applications
- General-purpose amplification and switching in industrial control systems, where reliable medium-power transistor performance is required for signal processing and relay driving.
- Low noise preamplifiers in sensor interfaces, benefiting from its consistent gain characteristics and low saturation voltage.
- Driver stages in motor control circuits, enabling efficient switching under moderate load conditions.
- Signal modulation and waveform shaping in audio and communication equipment, leveraging its wide frequency response and stable electrical parameters.
JANSR2N5152U3 Brand Info
The JANSR2N5152U3 is produced by a reputable semiconductor manufacturer renowned for delivering reliable, high-quality discrete components tailored for industrial electronics. This transistor adheres to strict military and industrial standards, ensuring durability and consistent performance. The brand focuses on providing products that meet rigorous operational demands, supporting engineers and designers in developing robust and efficient electronic solutions.
FAQ
What is the maximum collector current rating of this transistor?
The transistor supports a maximum collector current of 600 mA, making it suitable for medium-power switching and amplification tasks commonly found in industrial electronics applications.
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What voltage levels can this device handle safely?
This device is rated for a maximum collector-emitter voltage of 60 V and a collector-base voltage of 80 V, enabling its use in circuits operating at moderate voltage levels with reliable insulation and breakdown protection.
How does the gain range affect its application?
The current gain (hFE) ranges from 40 to 320, providing flexibility for designers. This wide gain spread allows tuning circuits for various amplification requirements, ensuring consistent performance across different operational conditions.
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Is this transistor suitable for high-temperature environments?
Yes, the device supports a maximum junction temperature of 200??C, allowing it to operate reliably in environments with elevated temperatures typical in industrial equipment and harsh conditions.
What package type is used for the JANSR2N5152U3, and how does it benefit integration?
The transistor is housed in a TO-92 package, which is a widely used form factor that facilitates easy mounting on printed circuit boards (PCBs), enabling straightforward integration into existing designs and prototyping processes.
