JANS2N2906AUBC/TR PNP Transistor by JAN ?C High Gain Amplifier, TO-92 Package

  • This transistor provides reliable switching and amplification, improving circuit performance and control.
  • Its voltage and current ratings support stable operation under typical load conditions, ensuring consistent functionality.
  • The compact package design allows for efficient use of board space in tight electronic assemblies.
  • Ideal for use in power regulation circuits, it helps maintain stable output and system reliability.
  • The JANS2N2906AUBC/TR meets stringent military standards, ensuring durability and long-term reliability.
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JANS2N2906AUBC/TR Overview

The JANS2N2906AUBC/TR is a silicon PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It features a robust JEDEC registered JAN military specification, ensuring high reliability under demanding environmental conditions. This transistor offers a maximum collector current of 600mA, a collector-emitter voltage rating of 40V, and a gain bandwidth product suitable for moderate frequency operation. The device is housed in a TO-18 metal can package, providing enhanced thermal performance and durability. This makes it well-suited for precision analog circuits, industrial control systems, and rugged military-grade electronics. For more information, visit IC Manufacturer.

JANS2N2906AUBC/TR Key Features

  • High current capacity: Supports up to 600mA collector current enabling robust switching and amplification in demanding applications.
  • JEDEC JAN military specification: Ensures stringent quality, reliability, and performance standards for mission-critical environments.
  • Low collector-emitter saturation voltage: Improves efficiency in switching circuits by minimizing power loss during conduction.
  • TO-18 metal can package: Provides enhanced thermal dissipation and mechanical durability compared to plastic encapsulated alternatives.
  • Moderate voltage rating: 40V collector-emitter voltage suitable for a wide range of analog and switching circuits without overdesign.
  • Consistent gain (hFE): Stable DC current gain ensures predictable amplification characteristics across operating conditions.

JANS2N2906AUBC/TR Technical Specifications

Parameter Specification
Transistor Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (Vceo) 40 V
Collector Current (Ic) 600 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 40 to 300 (varies by operating point)
Transition Frequency (fT) 100 MHz (typical)
Collector-Base Voltage (Vcbo) 60 V
Emitter-Base Voltage (Vebo) 5 V
Package TO-18 Metal Can
Operating Temperature Range -65??C to +200??C

JANS2N2906AUBC/TR Advantages vs Typical Alternatives

This transistor offers superior reliability and thermal stability due to its military-grade JAN specification and metal can packaging, which typical plastic-encapsulated devices lack. Its moderate voltage and current ratings make it a balanced choice for efficient switching and amplification with low saturation losses. The device??s stable gain and high frequency response contribute to accurate signal processing, making it ideal for industrial and defense applications demanding consistent performance over wide temperature ranges.

Typical Applications

  • General purpose amplification and switching in military and aerospace electronics requiring rugged, high-reliability components with stable gain and performance.
  • Industrial control systems where robust transistor switching under harsh environmental conditions is essential for dependable operation.
  • Analog signal processing circuits benefiting from the transistor??s moderate frequency response and low noise characteristics.
  • Power regulation and interface stages in instrumentation and measurement devices that require precision and thermal stability.

JANS2N2906AUBC/TR Brand Info

The JANS2N2906AUBC/TR is a high-quality transistor manufactured under the JAN (Joint Army-Navy) specification, recognized for its rigorous military standards. This designation ensures the component meets stringent testing for electrical, mechanical, and environmental parameters. Produced to deliver dependable operation in mission-critical systems, this product embodies robust design and manufacturing excellence. Its availability in a TO-18 metal can package reflects the brand??s commitment to durability and thermal performance, making it a trusted choice among engineers and sourcing specialists in industrial and defense sectors.

FAQ

What does the JAN designation mean for this transistor?

The JAN designation indicates the transistor complies with military specifications for quality, reliability, and performance. It undergoes thorough screening and testing to ensure it operates reliably under extreme environmental and electrical conditions, making it suitable for defense and aerospace applications.

What are the typical voltage and current limits for this transistor?

This device supports a maximum collector-emitter voltage of 40 volts and a collector current up to 600 milliamps. These ratings allow it to function effectively in moderate-power amplification and switching circuits without risk of damage under normal operating conditions.

How does the TO-18 metal can package affect performance?

The TO-18 metal can package enhances thermal dissipation and mechanical robustness compared to plastic packages. This helps maintain transistor reliability and stable operation at elevated temperatures and in harsh environments, which is critical in military and industrial applications.

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Can this transistor be used in high-frequency applications?

With a typical transition frequency around 100 MHz, this transistor is suitable for moderate frequency applications such as audio amplification and low- to mid-frequency switching. It is not intended for very high-frequency RF use but performs reliably within its specified frequency range.

What types of circuits commonly utilize this transistor?

This transistor is commonly used in analog amplification, switching circuits, industrial control systems, and instrumentation. Its reliability and performance under temperature extremes make it ideal for military, aerospace, and rugged industrial electronic designs.

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