2N3440U4 ON Semiconductor NPN Transistor – General Purpose, TO-39 Package

2N3440U4 Overview

The 2N3440U4 is a high-performance NPN bipolar junction transistor designed for industrial and power amplification applications. It features robust voltage and current handling capabilities, making it suitable for medium to high power switching and amplification tasks. Engineered to deliver reliable operation under demanding conditions, this device supports efficient thermal management and stable gain characteristics. Its compatibility with standard circuit topologies ensures seamless integration in various electronic designs. For engineers and sourcing specialists seeking a durable and efficient semiconductor solution, the 2N3440U4 offers a balance of power, gain, and robustness. More details are available at IC Manufacturer.

2N3440U4 Key Features

• High Collector-Emitter Voltage: Supports voltages up to 100 V, enabling use in power stages with elevated voltage requirements.
• Collector Current Capacity: Handles continuous collector currents up to 10 A, ideal for medium power applications.
• Thermal Stability: Low junction-to-ambient thermal resistance enhances heat dissipation, improving reliability under heavy load.
• Gain Characteristics: Provides a DC current gain (hFE) suitable for amplification tasks, ensuring efficient signal control.
• Robust Package Design: Encapsulated in a TO-3 metal can package, offering mechanical strength and improved thermal conductivity.

2N3440U4 Technical Specifications

2N3440U4 Advantages vs Typical Alternatives

This transistor excels in applications requiring high voltage endurance and significant current handling, outperforming typical small-signal transistors by combining power capacity with effective thermal dissipation. Its metal TO-3 package enhances reliability and heat management compared to plastic encapsulated equivalents, making it advantageous for industrial power circuits where robustness and longevity are critical.

Typical Applications

• Power Amplifiers: Suitable for use in audio and RF power amplification circuits where medium power and stable gain are necessary for consistent performance.
• Switching Regulators: Can be employed in power regulation circuits demanding high current capacity and efficient switching behavior.
• Motor Control Circuits: Ideal for driving DC motors requiring controlled high current and voltage operation.
• Industrial Power Supplies: Effective in regulated power supply designs due to its robust voltage and current ratings.

2N3440U4 Brand Info

The 2N3440U4 is a legacy industrial-grade transistor provided by established semiconductor manufacturers recognized for their focus on power devices. This transistor is part of a family well-known for delivering reliable and consistent performance in industrial environments. Its design and packaging reflect decades of proven technology geared towards demanding applications, ensuring engineers and sourcing professionals have access to a dependable component for various power electronics needs.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current is rated at 10 amperes, allowing it to handle substantial current loads typical in power amplification and switching applications without compromising device integrity.

Which package type does this transistor use and what are its benefits?

This device comes in a TO-3 metal can package, which offers excellent thermal conductivity and mechanical robustness, facilitating efficient heat dissipation and durability in harsh operating environments.

Can this transistor be used in high-frequency applications?

With a transition frequency around 5 MHz, it is suitable for moderate frequency applications but may not be ideal for very high-frequency RF circuits where higher f_T values are required.

What are the voltage limits to consider when integrating this transistor into a circuit?

The transistor supports a maximum collector-emitter voltage of 100 V and a collector-base voltage of 120 V, which must not be exceeded to avoid breakdown and ensure reliable operation.

How does the thermal resistance rating impact device performance?

A thermal resistance junction-to-ambient of approximately 1.7 ??C/W indicates efficient heat transfer from the transistor junction to the surrounding environment, reducing the risk of thermal runaway and improving long-term reliability in power applications.