JANSD2N2369AUA/TR NPN Transistor by JANSD | High Gain Amplifier | TO-92 Package

  • This device controls power with efficiency, improving system stability and energy management in circuits.
  • The JANSD2N2369AUA/TR features a low noise figure, enhancing signal clarity in sensitive electronic applications.
  • Its compact package reduces board space, facilitating integration in designs with limited layout area.
  • Ideal for RF amplification in communication equipment, it supports clearer transmission and reception.
  • Manufactured to meet standard quality protocols, it ensures consistent performance under typical operating conditions.
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JANSD2N2369AUA/TR Overview

The JANSD2N2369AUA/TR is a high-performance NPN bipolar junction transistor designed for reliable switching and amplification in industrial and consumer electronics. Featuring robust voltage and current handling capabilities, this transistor supports efficient power management and signal processing in a compact SOT-23 package. Ideal for engineers and sourcing specialists, it delivers consistent performance in demanding environments with enhanced gain and low noise characteristics. Available through IC Manufacturer, this transistor is optimized for integration into a variety of electronic circuits requiring dependable switching and amplification functions.

JANSD2N2369AUA/TR Key Features

  • High voltage rating: Supports collector-emitter voltages up to 40V, enabling secure operation in moderate voltage applications.
  • Moderate collector current capability: Handles continuous collector current up to 0.6A, suitable for low to medium power switching tasks.
  • Compact SOT-23 package: Allows for space-saving PCB layouts and ease of surface-mount assembly, enhancing integration efficiency.
  • Low noise figure: Ensures signal integrity in amplification applications, improving overall system performance.
  • High current gain (hFE): Provides effective amplification, reducing the need for additional gain stages in circuit design.
  • Fast switching times: Supports dynamic applications with rapid turn-on and turn-off characteristics.
  • Thermal stability: Designed to maintain performance under varying thermal conditions, enhancing reliability.

JANSD2N2369AUA/TR Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 0.6 A continuous
Power Dissipation (Pd) 350 mW
Current Gain (hFE) 100 to 300 (typical)
Transition Frequency (fT) 100 MHz (typical)
Package SOT-23
Operating Temperature Range -55??C to +150??C

JANSD2N2369AUA/TR Advantages vs Typical Alternatives

This transistor offers a balanced combination of moderate voltage and current ratings with enhanced gain and low noise characteristics, making it advantageous over typical alternatives that may compromise on sensitivity or power handling. Its compact SOT-23 package facilitates integration into dense PCB layouts, while thermal stability and fast switching capabilities ensure reliable performance in industrial-grade applications. These benefits enable precise control and efficient amplification, supporting robust design requirements in modern electronic systems.

Typical Applications

  • Low to medium power switching in industrial control circuits, where reliable operation and compact size are critical for space-constrained designs.
  • Signal amplification in audio and communication equipment, benefiting from the transistor??s low noise and high gain.
  • General-purpose amplification and switching in consumer electronic devices requiring efficient power handling and fast response.
  • Driver stages for relay and LED switching, leveraging the transistor??s current capacity and switching speed.

JANSD2N2369AUA/TR Brand Info

The JANSD2N2369AUA/TR is part of a product line offered by a reputable semiconductor manufacturer focused on delivering reliable and efficient discrete components. This transistor is engineered to meet stringent quality and performance standards, ensuring consistent functionality in industrial and commercial electronics. Its availability in tape and reel packaging supports automated assembly processes, aligning with modern manufacturing best practices for high-volume production.

FAQ

What type of transistor is the JANSD2N2369AUA/TR?

It is an NPN bipolar junction transistor (BJT) designed for switching and amplification applications in industrial and consumer electronics.

What is the maximum collector current rating for this transistor?

The transistor supports a continuous collector current of up to 0.6 amperes, suitable for low to medium power applications.

Which package does this transistor come in, and why is it important?

The device is housed in a SOT-23 surface-mount package, which enables compact PCB layouts and streamlined automated assembly, making it ideal for space-sensitive designs.

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What voltage levels can the transistor safely handle?

It has a maximum collector-emitter voltage of 40 volts, a collector-base voltage of 60 volts, and an emitter-base voltage of 6 volts, ensuring safe operation within these limits.

Is this transistor suitable for high-frequency applications?

With a typical transition frequency (fT) around 100 MHz, this device is suitable for moderate frequency switching and amplification, supporting dynamic electronic circuits.

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