JANSF2N2369AUA/TR N-Channel MOSFET Transistor by JAN | TO-220 Package

  • This transistor provides efficient switching functionality, enabling precise control in electronic circuits.
  • Its maximum voltage rating ensures safe operation under typical system stresses and prevents damage.
  • The compact package design offers board-space savings, allowing denser layouts in electronic assemblies.
  • Ideal for signal amplification in communication devices, improving overall system performance and clarity.
  • Manufactured to meet strict quality standards, ensuring consistent performance and long-term reliability.
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产品上方询盘

JANSF2N2369AUA/TR Overview

The JANSF2N2369AUA/TR is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial electronics. Featuring a robust gain bandwidth product and reliable switching characteristics, it supports efficient operation in demanding environments. This transistor offers a collector-emitter voltage rating suitable for medium-power circuits, making it a versatile choice for engineers and sourcing specialists seeking dependable discrete semiconductors. Manufactured under stringent quality controls, it aligns with military and industrial standards, ensuring consistent performance. For detailed sourcing and technical support, visit IC Manufacturer.

JANSF2N2369AUA/TR Key Features

  • High Voltage Capability: With a collector-emitter voltage rating supporting up to 60V, it enables handling of moderate voltage levels common in industrial switching.
  • Strong Current Handling: The device supports collector currents up to 0.8A, ensuring sufficient drive capacity for various loads and amplifier stages.
  • Fast Switching Speeds: Optimized for switching applications, it offers low storage time and transition times, reducing losses and improving efficiency.
  • Durable Construction: Qualified for military standards, the transistor guarantees high reliability under harsh environmental conditions, enhancing system longevity.

JANSF2N2369AUA/TR Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 0.8 A
Power Dissipation (Ptot) 1.0 W
DC Current Gain (hFE) 100?C300 (typical) ?C
Transition Frequency (fT) 100 MHz
Operating Junction Temperature (Tj) -65 to +200 ??C

JANSF2N2369AUA/TR Advantages vs Typical Alternatives

This transistor stands out by combining a higher voltage rating and robust current capacity with fast switching speeds, which many standard alternatives do not offer simultaneously. Its military-grade qualification ensures enhanced reliability and thermal endurance, making it ideal for critical industrial applications. The balance of gain and frequency response supports efficient amplification and switching, providing engineers with a versatile and dependable solution.

Typical Applications

  • Switching circuits requiring medium voltage and current control, such as relay drivers and power management modules, where fast response and reliable operation are critical.
  • Signal amplification stages in industrial control systems, benefiting from stable gain and frequency characteristics.
  • General-purpose amplifier circuits in instrumentation and measurement devices, leveraging its low noise and high gain.
  • Military and aerospace electronic assemblies that demand rugged components capable of withstanding extreme environmental conditions.

JANSF2N2369AUA/TR Brand Info

The JANSF2N2369AUA/TR is a military-specification transistor variant produced by a reputable semiconductor manufacturer known for stringent quality standards. This product is built to meet rigorous testing protocols for temperature, electrical performance, and durability. It is part of a legacy line designed to deliver consistent and reliable operation in critical defense and industrial applications. The brand emphasizes precision manufacturing, traceability, and long-term availability, supporting engineers and procurement teams requiring trusted components for mission-critical designs.

FAQ

What voltage and current ratings does this transistor support?

This transistor supports a collector-emitter voltage up to 60V and a collector current up to 0.8A, making it suitable for moderate power switching and amplification applications in industrial and military environments.

Is this transistor suitable for high-frequency applications?

Yes, with a transition frequency of approximately 100 MHz, it can handle moderate high-frequency amplification and switching tasks, making it versatile for signal processing circuits.

What temperature range can the device operate within?

The transistor is qualified for operation over a wide junction temperature range from -65??C to +200??C, ensuring reliability under harsh environmental and thermal conditions.

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产品中间询盘

How does this transistor compare to commercial-grade equivalents?

Compared to commercial-grade counterparts, this device offers military-spec reliability and enhanced electrical performance, including higher voltage ratings and improved thermal endurance, suitable for demanding applications.

What type of packaging does the transistor come in?

The device is typically supplied in a standard TO-18 metal can package, which provides excellent thermal dissipation and mechanical protection, preferred in industrial and military electronic assemblies.

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