JANSD2N2907AUA/TR Transistor PNP Amplifier – JANSD Brand, TO-252 Package

  • The device functions as a transistor, enabling efficient switching and amplification in electronic circuits.
  • It features a high current gain, ensuring strong signal amplification with minimal input power.
  • The compact TO-92 package reduces board space, facilitating integration into designs with limited area.
  • JANSD2N2907AUA/TR suits general-purpose applications like signal processing and low-power switching tasks.
  • Manufactured under strict quality controls, it offers consistent performance and long-term reliability.
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产品上方询盘

JANSD2N2907AUA/TR Overview

The JANSD2N2907AUA/TR is a robust PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Engineered to deliver reliable performance under varied industrial conditions, this transistor supports medium power handling with efficient gain characteristics. Featuring a TO-92 package, it facilitates easy integration into compact circuits. Ideal for engineers and sourcing specialists, this device balances cost-effectiveness with dependable electrical parameters, making it suitable for use in analog signal processing, load driving, and switching tasks. For detailed sourcing and technical assistance, visit the IC Manufacturer website.

JANSD2N2907AUA/TR Key Features

  • High current gain: Provides consistent amplification across a wide range of collector currents, ensuring stable circuit operation.
  • Medium power dissipation: Supports power handling up to 625 mW, enabling use in moderate load switching and amplification without excessive thermal management.
  • Low collector-emitter saturation voltage: Minimizes power loss during switching, improving overall energy efficiency in power control circuits.
  • Wide operating voltage range: Collector-emitter voltage rating up to 40 V accommodates various industrial voltage levels safely.

JANSD2N2907AUA/TR Technical Specifications

Parameter Value Unit
Transistor Type PNP Bipolar Junction Transistor ?C
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 800 mA
Power Dissipation (PD) 625 mW
DC Current Gain (hFE) 100?C300 ?C
Transition Frequency (fT) 100 MHz
Package Type TO-92 ?C

JANSD2N2907AUA/TR Advantages vs Typical Alternatives

This transistor offers a favorable combination of current gain and power dissipation in a compact TO-92 package, giving it an edge over similar devices that may require larger footprints or exhibit lower gain. Its voltage ratings and low saturation voltage reduce power loss and thermal stress, enhancing reliability and efficiency compared to generic PNP transistors. Such characteristics make it an excellent choice for cost-sensitive industrial designs demanding steady performance and easy circuit integration.

Typical Applications

  • Signal amplification in analog circuits, where stable gain and medium power handling ensure clean audio or sensor signal processing.
  • Switching loads such as relays and small motors in control systems requiring reliable transistor switching.
  • Voltage regulation and current control stages in industrial power management designs, benefiting from its voltage ratings and gain.
  • General-purpose discrete circuits in automation and instrumentation, where standard transistor performance is essential for robust operation.

JANSD2N2907AUA/TR Brand Info

The JANSD2N2907AUA/TR is manufactured by a reputable semiconductor supplier known for high-quality discrete components optimized for industrial and commercial electronics. The brand emphasizes rigorous quality control and consistent parameter specifications to meet demanding application requirements. This transistor series is widely recognized for its dependable performance, broad availability, and compliance with industry standards, making it a trusted choice for engineers and procurement specialists worldwide.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this PNP transistor is 800 mA, which allows it to handle moderate power loads, making it suitable for a variety of switching and amplification tasks in industrial circuits.

Can this transistor be used for high-frequency applications?

Yes, with a transition frequency (fT) of approximately 100 MHz, this device can support moderate high-frequency operations, suitable for many signal processing and amplifier stages where frequency response is important.

What package type does this transistor come in, and how does it benefit circuit design?

This transistor is housed in a TO-92 package, which is a compact, through-hole format that simplifies prototyping and assembly while providing reliable thermal and mechanical stability for general-purpose applications.

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产品中间询盘

Is the transistor suitable for power switching applications?

With a power dissipation rating of 625 mW and a collector-emitter voltage limit of 40 V, this device can effectively switch moderate power loads such as small motors, relays, or indicator lamps within its specified limits.

How does the low collector-emitter saturation voltage impact circuit efficiency?

A low saturation voltage reduces the voltage drop across the transistor when it is fully on, minimizing power losses and heat generation. This leads to improved energy efficiency and reliability in switching circuits, especially important in power-sensitive industrial environments.

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