JANSR2N2907AUA/TR Overview
The JANSR2N2907AUA/TR is a high-performance PNP bipolar junction transistor engineered for switching and amplifier applications in industrial and military environments. Designed to meet stringent JAN (Joint Army-Navy) reliability standards, this transistor ensures consistent operation under harsh conditions, including temperature extremes and mechanical stress. With its robust gain characteristics and stable electrical parameters, it provides dependable performance in analog and digital circuits. Ideal for engineers and sourcing specialists, the JANSR2N2907AUA/TR combines reliability with versatility, making it suitable for a wide range of critical applications in aerospace, defense, and industrial control systems. Available through IC Manufacturer.
JANSR2N2907AUA/TR Key Features
- High current gain (hFE): Enables efficient signal amplification, improving circuit sensitivity and performance.
- Collector-Emitter voltage rating: Supports up to 60 V, allowing reliable operation in medium voltage switching applications.
- Low saturation voltage (VCE(sat)): Reduces power dissipation and enhances overall circuit efficiency.
- JAN military standard compliance: Guarantees ruggedness and reliability under extreme environmental conditions.
- High transition frequency (fT): Facilitates high-speed switching, essential for fast response in control circuits.
- Hermetically sealed TO-39 package: Provides superior protection against moisture and contaminants, ensuring long-term stability.
- Complementary to NPN counterparts: Enables complementary amplifier designs and push-pull configurations.
JANSR2N2907AUA/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 600 | mA |
| Power Dissipation (Ptot) | 625 | mW |
| DC Current Gain (hFE) | 100?C300 | (typical range) |
| Transition Frequency (fT) | 100 | MHz |
| Operating Temperature Range | -65 to +200 | ??C |
| Package Type | TO-39 | Metal Can |
JANSR2N2907AUA/TR Advantages vs Typical Alternatives
This transistor offers superior reliability and stable gain performance compared to standard commercial equivalents. Its compliance with JAN military standards ensures robust operation in extreme environments, enhancing system uptime and reducing failure rates. The low saturation voltage and high transition frequency make it more efficient for switching and amplification tasks, improving power management and signal integrity in demanding industrial and defense applications.
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Typical Applications
- Signal amplification in aerospace and military communication systems, where reliability and stable gain across temperature ranges are critical.
- Switching elements in industrial control circuits requiring robust operation under electrical and environmental stress.
- Complementary transistor stages in push-pull audio amplifiers, benefiting from matched PNP performance.
- General-purpose amplification in sensor interfaces and low noise analog circuits within defense-grade electronic equipment.
JANSR2N2907AUA/TR Brand Info
The JANSR2N2907AUA/TR is produced under strict military standards by a reputable manufacturer known for delivering high-reliability semiconductor components. This product embodies the Joint Army-Navy (JAN) certification, verifying its ruggedness and endurance for mission-critical applications. Its heritage in military and aerospace sectors underscores its quality assurance and traceability, making it a trusted choice for engineers requiring dependable PNP transistor performance in demanding environments.
FAQ
What environments is this transistor suitable for?
This transistor is designed for operation in harsh environments, including wide temperature ranges from -65??C to +200??C, making it suitable for aerospace, military, and industrial applications where reliability under mechanical and thermal stress is essential.
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How does the JANSR2N2907AUA/TR differ from commercial PNP transistors?
Unlike typical commercial PNP transistors, this device meets JAN military specifications, ensuring higher standards of quality, reliability, and environmental resistance. Its hermetically sealed TO-39 package further protects it from moisture and contaminants.
Can this transistor be used in high-frequency applications?
Yes, with a transition frequency (fT) around 100 MHz, it supports moderate to high-frequency switching and amplification tasks, suitable for many signal processing and control circuit designs.
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What are the key electrical limits to consider in circuit design?
Designers should note the collector-emitter voltage rating of 60 V, maximum collector current of 600 mA, and power dissipation of 625 mW to ensure the transistor operates within safe limits and maintains reliability.
Is this transistor compatible with complementary NPN types?
Yes, it is complementary to common NPN transistors like the 2N2222 family, allowing engineers to design push-pull amplifier stages and other complementary circuit topologies efficiently.
