MVR2N2222AUA/TR Overview
The MVR2N2222AUA/TR is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a robust collector current capacity and reliable gain characteristics, this transistor excels in both low-power and medium-power circuits. Its compact surface-mount SOT-23 package allows for efficient PCB layout and integration in dense electronic assemblies. Optimized for industrial and commercial use, the device provides consistent performance with enhanced thermal stability, making it suitable for a wide range of electronic designs. For detailed information and sourcing, visit IC Manufacturer.
MVR2N2222AUA/TR Key Features
- High Collector Current: Supports up to 600 mA continuous collector current, enabling robust switching and amplification in demanding applications.
- Medium Power Dissipation: Capable of dissipating power up to 350 mW, ensuring reliable operation under moderate load conditions.
- Surface-Mount Package: The SOT-23 form factor facilitates compact designs and automated assembly, enhancing manufacturing efficiency.
- Wide Voltage Range: Collector-emitter voltage up to 40 V allows use in diverse voltage environments, increasing design flexibility.
MVR2N2222AUA/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 75 | V |
| Emitter-Base Voltage (VEBO) | 6 | V |
| Collector Current (IC) | 600 | mA |
| Power Dissipation (Ptot) | 350 | mW |
| Gain Bandwidth Product (fT) | 300 | MHz |
| DC Current Gain (hFE) | 100 – 300 | (typical) |
| Package Type | SOT-23 | ?C |
MVR2N2222AUA/TR Advantages vs Typical Alternatives
This transistor offers a balanced combination of reliable current handling and compact packaging, outperforming many generic alternatives. Its enhanced gain bandwidth and thermal dissipation make it well-suited for efficient signal amplification and switching in industrial applications. The surface-mount SOT-23 format supports automated PCB assembly, reducing production costs while maintaining consistent electrical characteristics. These features contribute to superior integration and dependable operation in demanding electronic systems.
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Typical Applications
- General-purpose switching and amplification circuits, including signal processing and driver stages, where stable gain and moderate power handling are essential.
- Low-power motor control and relay driving applications requiring fast switching response and reliable current capacity.
- Audio preamplifiers and small-signal amplifiers benefiting from the transistor??s consistent gain and frequency response.
- Industrial control systems and sensor interface circuits where compact size and thermal stability improve overall system performance.
MVR2N2222AUA/TR Brand Info
The MVR2N2222AUA/TR transistor is manufactured by a leading semiconductor producer known for stringent quality control and industry-standard reliability. This product aligns with the brand??s commitment to delivering robust components optimized for industrial and commercial electronic applications. It embodies precise engineering and adherence to international standards, ensuring long-term availability and support for global design and manufacturing partners.
FAQ
What is the maximum collector current rating for this transistor?
The device supports a maximum continuous collector current of 600 mA, allowing it to handle moderate load conditions in switching and amplification applications without performance degradation.
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What package type does this transistor use, and why is it beneficial?
It comes in a compact SOT-23 surface-mount package, which allows for space-saving PCB layouts and compatibility with automated surface-mount technology assembly lines, improving manufacturing efficiency.
Can this transistor be used in high-frequency applications?
Yes, the transistor features a gain bandwidth product of approximately 300 MHz, making it suitable for medium-frequency amplification and switching tasks typically found in industrial electronics.
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What voltage limits should be observed when using this device?
The maximum collector-emitter voltage rating is 40 V, while the collector-base voltage can go up to 75 V. Staying within these limits is critical to ensure device longevity and prevent breakdown.
How does this transistor perform in terms of power dissipation?
With a maximum power dissipation rating of 350 mW, the transistor can reliably operate under moderate thermal conditions, provided adequate PCB heat management practices are followed.







