JANSR2N2906AUA/TR Overview
The JANSR2N2906AUA/TR is a robust PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications in industrial electronics. Engineered to deliver reliable performance under demanding conditions, this transistor supports medium power operation with a maximum collector current of 600 mA and a collector-emitter voltage rating of 40 V. Its complementary NPN/PNP pairing capability and stable gain characteristics make it a preferred choice for analog circuits, signal amplification, and switching tasks. Available in a TO-18 metal can package, it ensures excellent thermal dissipation and mechanical durability. The device meets military-grade standards, assuring high reliability in critical applications. For detailed technical specifications and sourcing, visit IC Manufacturer.
JANSR2N2906AUA/TR Key Features
- High Collector Current Capacity: Supports up to 600 mA, enabling efficient control of moderate power loads in industrial circuits.
- Collector-Emitter Voltage Rating: Rated at 40 V, suitable for a wide range of medium voltage applications, ensuring versatility in system design.
- Low Power Dissipation: With a maximum power dissipation of 625 mW, it offers efficient thermal management and reduces the need for complex heat sinks.
- Guaranteed Gain Bandwidth Product: Offers a transition frequency (fT) up to 100 MHz, supporting high-speed switching and amplification tasks.
JANSR2N2906AUA/TR Technical Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | V |
| Collector-Base Voltage | VCBO | 60 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current (Continuous) | IC | 600 | mA |
| Power Dissipation | Ptot | 625 | mW |
| DC Current Gain (hFE) | hFE | 100 – 300 | (typical) |
| Transition Frequency | fT | 100 | MHz |
| Junction Temperature | Tj | +200 | ??C |
| Package Type | – | TO-18 Metal Can | – |
JANSR2N2906AUA/TR Advantages vs Typical Alternatives
This transistor offers superior reliability and thermal stability compared to standard plastic-encapsulated devices due to its TO-18 metal can packaging. Its moderate power and voltage ratings, combined with a high DC gain and transition frequency, provide enhanced amplification accuracy and switching speed. The device??s military-grade qualification ensures consistent performance in harsh environments, making it advantageous for applications demanding durability and precision over typical commercial alternatives.
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Typical Applications
- Signal amplification in analog and mixed-signal circuits, where stable gain and moderate power handling are essential for accurate signal processing.
- Switching elements in control circuits, enabling efficient and reliable operation of electromechanical loads or digital interfaces.
- Complementary transistor pairs in push-pull amplifier configurations, improving linearity and reducing distortion in audio and RF circuits.
- Industrial control systems requiring robust transistors capable of operating under varied temperature and electrical stress conditions.
JANSR2N2906AUA/TR Brand Info
The JANSR2N2906AUA/TR is manufactured under stringent quality controls, meeting military specification standards for semiconductor devices. This product line emphasizes durability, consistent electrical characteristics, and rugged packaging to serve aerospace, defense, and industrial markets. The brand is recognized for delivering high-reliability discrete components suitable for demanding electronic designs that require extended operational life and dependable performance.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current for this device is rated at 600 mA, which makes it suitable for medium power switching and amplification tasks in various industrial applications.
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What type of package does this transistor come in, and why is it important?
This transistor is housed in a TO-18 metal can package. This packaging provides superior thermal dissipation and mechanical protection compared to typical plastic packages, improving reliability, especially in harsh environmental conditions.
Can this transistor be used in high-frequency applications?
Yes, it supports a transition frequency (fT) of up to 100 MHz, making it appropriate for high-speed switching and moderate-frequency amplification circuits commonly found in industrial electronics.
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What voltage ratings are relevant for designing circuits with this transistor?
The device has a collector-emitter voltage rating of 40 V and a collector-base voltage rating of 60 V. These values define the maximum voltages that can be safely applied without causing breakdown, critical for ensuring device longevity and circuit safety.
Is this transistor suitable for military or aerospace applications?
Yes, it meets military-grade specifications, which include rigorous testing for environmental and electrical performance, making it a reliable choice for aerospace, defense, and other mission-critical industrial applications.
