JANSR2N2222AUA/TR NPN Transistor by JAN | General Purpose Amplifier | TO-92 Package

  • This transistor enables efficient switching and amplification, improving circuit control and signal strength.
  • The device features a voltage rating suitable for general-purpose applications, ensuring reliable operation under typical conditions.
  • Its compact SOT-23 package offers significant board-space savings for dense electronic designs.
  • Ideal for use in low-power signal switching scenarios, it helps reduce energy consumption in portable devices.
  • Manufactured to meet industry reliability standards, this component supports consistent performance over time.
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JANSR2N2222AUA/TR Overview

The JANSR2N2222AUA/TR is a robust NPN bipolar junction transistor (BJT) designed for switching and amplification tasks in industrial electronics. Featuring high current gain and fast switching capabilities, it supports a collector current up to 800mA and a voltage rating of 40V. This transistor is optimized for reliable performance in demanding environments, making it suitable for rugged control circuits and signal processing. Packaged in a standard TO-18 metal can, it ensures thermal efficiency and durability. For engineers and sourcing specialists seeking a dependable general-purpose transistor, this device combines proven performance with quality manufacturing standards from the IC Manufacturer.

JANSR2N2222AUA/TR Key Features

  • High collector current capacity: Supports up to 800mA, enabling effective switching of moderate loads in industrial circuits.
  • Low saturation voltage: Minimizes power loss and improves efficiency in switching applications, critical for energy-conscious designs.
  • Fast transition frequency (fT): Typically 250MHz, allowing for responsive signal amplification and high-speed switching.
  • Durable TO-18 metal can package: Enhances thermal dissipation and mechanical robustness for long-term reliability in harsh environments.

JANSR2N2222AUA/TR Technical Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage Vceo 40 V
Collector Current Ic 800 mA
Power Dissipation Pc 625 mW
Current Gain (hFE) at Ic=150mA hFE 100?C300 ??
Transition Frequency fT 250 MHz
Emitter-Base Voltage Vebo 6 V
Package Type ?? TO-18 ??
Operating Junction Temperature Tj 150 ??C

JANSR2N2222AUA/TR Advantages vs Typical Alternatives

This transistor offers superior reliability and thermal performance compared to many plastic-encapsulated alternatives due to its TO-18 metal can package. Its combination of high current capability and fast switching frequency delivers enhanced efficiency for both analog and digital circuit designs. Additionally, the device??s robust voltage rating and consistent gain ensure precise control and stable operation in industrial-grade applications.

Typical Applications

  • Switching and amplification in industrial control circuits, where reliable high-current operation and fast response times are essential for system stability and performance.
  • Signal processing stages in audio and instrumentation equipment, benefiting from low noise and consistent gain characteristics.
  • Driver stages for relays and small motors, utilizing the transistor??s ability to handle moderate loads efficiently.
  • General-purpose amplification and switching tasks in embedded systems requiring rugged components for long-term dependability.

JANSR2N2222AUA/TR Brand Info

The JANSR2N2222AUA/TR is produced under stringent military standards, ensuring high reliability and quality control. This product line is known for its precision manufacturing and robust performance in industrial and defense applications. The transistor??s construction aligns with the brand??s commitment to delivering stable and durable semiconductor solutions tailored to demanding environments, making it a trusted choice for engineers requiring dependable components.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current is rated at 800mA, allowing it to switch and amplify moderate current loads safely within specified voltage and thermal limits.

Which package type does this transistor use, and why is it important?

This device is housed in a TO-18 metal can package, which provides enhanced thermal dissipation and mechanical durability compared to plastic packages, improving reliability in harsh or high-temperature environments.

What is the typical gain (hFE) range, and how does it affect circuit design?

The current gain (hFE) typically ranges from 100 to 300 at a collector current of 150mA. This range enables designers to predict amplification levels accurately for stable and efficient circuit operation.

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产品中间询盘

Can this transistor be used for high-frequency applications?

Yes, with a transition frequency (fT) of approximately 250MHz, it is suitable for moderate to high-frequency switching and amplification, making it versatile for various signal processing tasks.

What operating temperatures can this device withstand?

The transistor supports an operating junction temperature up to 150??C, allowing it to function reliably in elevated temperature conditions commonly found in industrial applications.

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