JANSR2N2906AUB/TR PNP Transistor by JAN | High Gain Amplifier | TO-92 Package

  • This transistor provides efficient switching and amplification for various electronic circuits, enhancing overall device performance.
  • JANSR2N2906AUB/TR features a robust current handling capacity, ensuring stable operation under demanding electrical loads.
  • Its compact SOT-23 package offers board space savings, making it suitable for high-density circuit designs.
  • Ideal for signal processing in communication devices, it supports reliable data transmission and circuit responsiveness.
  • Manufactured with strict quality controls to ensure consistent performance and long-term operational reliability.
Microchip Technology-logo
产品上方询盘

JANSR2N2906AUB/TR Overview

The JANSR2N2906AUB/TR is a high-performance PNP bipolar junction transistor designed for switching and amplification in industrial electronics. Offering robust electrical characteristics, this transistor provides reliable operation at voltages up to 60 V and collector currents up to 600 mA, making it suitable for a wide range of control and signal applications. Its complementary design ensures seamless integration into amplifier circuits and driver stages. Sourced from a trusted supplier, this component supports engineers and sourcing specialists in building efficient, dependable systems. For additional product details and sourcing options, visit IC Manufacturer.

JANSR2N2906AUB/TR Key Features

  • High Collector Current Capability: Handles up to 600 mA, enabling reliable switching in moderate power circuits.
  • Voltage Endurance: Supports a maximum collector-emitter voltage of 60 V, suitable for diverse industrial voltage levels.
  • Complementary PNP Configuration: Ideal for push-pull amplifier stages and general-purpose switching applications.
  • Stable Gain Characteristics: Offers consistent DC current gain, ensuring predictable amplification performance.

JANSR2N2906AUB/TR Technical Specifications

Parameter Specification Unit
Transistor Type PNP Bipolar Junction Transistor ?C
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 100 to 300 ?C
Transition Frequency (fT) 100 MHz
Operating Temperature Range -65 to 200 ??C

JANSR2N2906AUB/TR Advantages vs Typical Alternatives

This transistor offers a balanced combination of moderate collector current and high voltage handling, giving it an edge over similar devices that may be limited to lower currents or voltages. Its stable gain and reliable switching performance ensure superior circuit accuracy and consistency. These features make it a dependable choice for engineers focusing on durability and efficiency in industrial and automotive electronics applications.

Typical Applications

  • Switching and amplification in industrial control circuits, where reliable signal processing and power handling are essential for system stability and performance.
  • Driver stages in audio amplifiers, leveraging its complementary PNP configuration for balanced push-pull output stages.
  • General-purpose switching in power management circuits to control loads within moderate voltage and current ranges.
  • Signal amplification in sensor interfacing where stable gain characteristics ensure accurate signal conditioning.

JANSR2N2906AUB/TR Brand Info

The JANSR2N2906AUB/TR is a semiconductor product designed to meet stringent military and industrial standards. It belongs to a family of reliable bipolar transistors widely recognized for quality and performance. This part is offered in a robust package suitable for harsh environments, reflecting the brand??s commitment to durability and operational excellence in demanding applications.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current is 600 mA. This rating allows the transistor to handle moderate power levels safely in switching and amplification circuits without risk of damage under specified conditions.

Can this transistor operate at high frequencies?

Yes, the device has a transition frequency (fT) of approximately 100 MHz, making it suitable for use in moderate frequency applications such as audio and general-purpose signal amplification.

What are the voltage limits for the transistor?

The maximum collector-emitter voltage (VCEO) and collector-base voltage (VCBO) are both rated at 60 V. The emitter-base voltage (VEBO) is limited to 5 V. These limits define the safe operating voltage envelope for the device.

📩 Contact Us

产品中间询盘

Is this transistor suitable for use in harsh environments?

Yes, it supports an operating temperature range from -65??C to 200??C, indicating strong thermal resilience. This makes it appropriate for use in demanding industrial and military applications where temperature extremes are common.

What type of applications is this PNP transistor best suited for?

This transistor is ideal for general-purpose switching, amplification, and driver stages in industrial control, audio amplification, and sensor signal conditioning. Its complementary configuration allows easy integration into push-pull amplifier designs.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?