JANS2N2221AUBC/TR NPN Transistor by JAN | High Gain Amplifier | TO-92 Package

  • This transistor controls current flow efficiently, enabling precise switching in electronic circuits.
  • JANS2N2221AUBC/TR features a silicon NPN structure, ensuring reliable performance under varied conditions.
  • The compact TO-18 package offers board-space savings and aids thermal management in tight layouts.
  • Ideal for signal amplification in communication devices, it enhances clarity and stability of transmissions.
  • Manufactured to meet military standards, it delivers consistent operation and long-term durability.
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JANS2N2221AUBC/TR Overview

The JANS2N2221AUBC/TR is a high-reliability NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Manufactured to meet military and industrial standards, this transistor offers robust performance with consistent gain characteristics and high voltage handling capability. Ideal for demanding environments, it supports linear and switching operations with low noise and fast switching speeds. The device is supplied in a hermetically sealed TO-18 metal can package, ensuring enhanced thermal stability and long-term reliability. For sourcing and technical inquiries, visit IC Manufacturer.

JANS2N2221AUBC/TR Key Features

  • High voltage tolerance: With a collector-emitter voltage rating up to 40 V, it supports robust operation in various circuit topologies.
  • Reliable gain performance: A current gain (hFE) range tailored for amplification ensures stable and predictable signal processing.
  • Hermetic TO-18 package: Enhances environmental resistance and thermal management, critical for industrial and military-grade use.
  • Fast switching capabilities: Suitable for switching circuits requiring rapid response and low saturation voltages.

JANS2N2221AUBC/TR Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 600 mA
Power Dissipation (Ptot) 800 mW
Current Gain (hFE) 40 to 300 (depending on test conditions)
Transition Frequency (fT) 250 MHz (typical)
Package Type Hermetic TO-18 Metal Can
Operating Temperature Range -65??C to +200??C

JANS2N2221AUBC/TR Advantages vs Typical Alternatives

This transistor offers superior reliability and environmental resistance due to its hermetically sealed metal package, making it well-suited for high-temperature and harsh conditions compared to plastic-encapsulated alternatives. Its balanced gain and voltage ratings provide engineers with flexibility in amplification and switching circuits, while the fast transition frequency supports efficient high-speed operation, enhancing overall circuit performance and durability.

Typical Applications

  • Signal amplification in low to medium power stages, providing stable gain and low noise for precise analog circuits.
  • Switching circuits requiring fast turn-on and turn-off times in industrial control systems and power management.
  • General-purpose transistor duties in military and aerospace electronics where reliability under extreme conditions is critical.
  • Temperature-sensitive environments benefiting from the hermetic TO-18 package??s superior thermal stability.

JANS2N2221AUBC/TR Brand Info

The JANS2N2221AUBC/TR is part of a trusted series of transistors manufactured under strict military standards to ensure consistent quality and ruggedness. This product is designed and tested for long-term reliability in aerospace, defense, and industrial applications. Its production, traceability, and screening conform to stringent quality assurance protocols, offering engineers confidence in performance across demanding use cases.

FAQ

What are the key electrical ratings of this transistor?

This transistor supports a collector-emitter voltage up to 40 V, a collector current of 600 mA, and power dissipation of 800 mW. It also has a collector-base voltage rating of 75 V, making it suitable for moderate voltage amplification and switching tasks.

How does the TO-18 package benefit device performance?

The hermetic TO-18 metal can package provides excellent protection against moisture and contaminants, improving long-term reliability. It also offers enhanced thermal conductivity for efficient heat dissipation, which is critical in high-temperature or high-power applications.

What is the typical current gain range for this transistor?

The device exhibits a current gain (hFE) typically ranging from 40 to 300 depending on the operating conditions and test parameters, allowing it to be used effectively in various linear and switching configurations.

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Can this transistor be used in high-frequency applications?

Yes, with a typical transition frequency (fT) of 250 MHz, this transistor is capable of handling moderate high-frequency signals, making it suitable for RF amplification and fast switching circuits.

What temperature range does this transistor support?

The operating temperature range spans from -65??C to +200??C, enabling use in extreme environments such as aerospace and military systems where thermal resilience is essential.

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