JANSR2N2369AU/TR NPN Transistor by JANSR | High Gain Amplifier | TO-92 Package

  • This component acts as a transistor, enabling efficient signal amplification and switching in electronic circuits.
  • Its electrical characteristics support stable operation, ensuring consistent performance under varying conditions.
  • The compact package design reduces board space, facilitating integration into densely packed assemblies.
  • In power management systems, it helps regulate current flow, enhancing overall device efficiency and control.
  • Manufactured under controlled processes, it offers reliable operation and long-term durability in typical applications.
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JANSR2N2369AU/TR Overview

The JANSR2N2369AU/TR is a high-performance NPN bipolar junction transistor designed for low-noise amplifier and switching applications. Offering a maximum collector current of 0.8A and a voltage rating suitable for a wide range of industrial uses, this transistor ensures reliable operation under demanding conditions. Its rugged construction and standardized JAN (Joint Army-Navy) quality level certification make it an ideal choice for aerospace, military, and industrial electronics. Engineers and sourcing specialists will appreciate its balance of gain, frequency response, and durability, ensuring consistent performance in critical signal amplification and switching roles. For more detailed product information, visit IC Manufacturer.

JANSR2N2369AU/TR Key Features

  • High Collector Current Capacity: Supports up to 0.8A, enabling effective switching and amplification in medium-power circuits.
  • Low Noise Figure: Optimized for low noise, making it suitable for sensitive signal amplification in communication and instrumentation equipment.
  • High Voltage Endurance: Collector-Emitter voltage rating of 40V ensures robust operation in various voltage environments.
  • JAN Military Specification Compliance: Certified for reliability and ruggedness, meeting stringent military standards for dependable operation.

JANSR2N2369AU/TR Technical Specifications

ParameterValue
Transistor TypeNPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)40 V
Collector-Base Voltage (VCBO)60 V
Emitter-Base Voltage (VEBO)5 V
Collector Current (IC)0.8 A
Power Dissipation (PD)0.8 W
Transition Frequency (fT)100 MHz (typical)
DC Current Gain (hFE)70 to 300 (varies with current)
Package TypeTO-18 Metal Can

JANSR2N2369AU/TR Advantages vs Typical Alternatives

This transistor provides superior noise performance and consistent gain, making it advantageous over standard general-purpose NPN transistors. Its military-grade qualification ensures enhanced reliability under harsh environmental conditions. Compared to typical alternatives, it offers a balanced combination of current capacity and voltage ratings, delivering stable switching and amplification with improved long-term durability.

Typical Applications

  • Low-noise amplifier circuits where signal integrity is critical, such as in radar and communication receivers, benefiting from its low noise figure and high-frequency response.
  • Switching applications in industrial control systems requiring robust transistor operation at moderate power levels.
  • Signal processing circuits in military and aerospace electronics where reliability and performance under stress are mandatory.
  • General-purpose amplification in instrumentation and measurement devices needing a balance of gain and frequency response.

JANSR2N2369AU/TR Brand Info

The JANSR2N2369AU/TR is part of a family of transistors produced under the JAN certification, indicating compliance with rigorous military standards. This designation guarantees high reliability, enhanced quality control, and traceability, making it a trusted component in defense and aerospace sectors. The product is distributed by reputable semiconductor manufacturers specializing in industrial and military-grade electronics, ensuring availability and support for demanding applications.

FAQ

What does the JAN certification signify for this transistor?

JAN certification means the transistor meets strict military standards for quality, reliability, and environmental robustness. It ensures the device can perform consistently in harsh conditions such as extreme temperatures, vibration, and humidity, making it suitable for aerospace and defense applications.

What are the key electrical limits for safe operation?

The transistor supports a collector-emitter voltage up to 40V and a collector current up to 0.8A. Power dissipation is rated at 0.8W, and the emitter-base voltage should not exceed 5V. Staying within these limits ensures reliable performance and prevents device damage.

How does the low noise figure benefit amplifier circuits?

A low noise figure reduces unwanted signal disturbances, enhancing the clarity and fidelity of amplified signals. This is essential in sensitive applications such as communication receivers and instrumentation where signal quality directly impacts system performance.

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What package type is used and why is it important?

The TO-18 metal can package provides excellent thermal conductivity and mechanical protection. This helps maintain stable operation by effectively dissipating heat and shielding the transistor from physical and environmental stress.

Can this transistor be used in high-frequency applications?

Yes, with a typical transition frequency around 100 MHz, this transistor is well-suited for moderate to high-frequency circuits, including RF amplifiers and switching circuits in communication systems.

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