JANSP2N2369AU/TR NPN Transistor by JAN Semiconductor ?C TO-92 Package, High Gain

  • This device provides stable voltage regulation, ensuring consistent performance in electronic circuits.
  • Featuring a maximum output current suitable for moderate loads, it supports diverse power requirements efficiently.
  • The compact package design allows for board-space savings, enabling integration into smaller or crowded assemblies.
  • Ideal for embedded systems, it helps maintain power stability, enhancing overall device reliability during operation.
  • Manufactured under controlled processes, it offers dependable functionality and long-term operational stability.
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产品上方询盘

JANSP2N2369AU/TR Overview

The JANSP2N2369AU/TR is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial and consumer electronics. It features a robust collector current capability and excellent gain characteristics, making it suitable for low to medium power circuits. The transistor is housed in a TO-92 package, ensuring ease of integration and reliable thermal performance. Its stable electrical parameters and switching speed provide engineers with a dependable component for signal processing and control tasks. For detailed specifications and sourcing, visit IC Manufacturer.

JANSP2N2369AU/TR Key Features

  • High Collector Current Capability: Supports up to 0.8 A continuous collector current, enabling effective switching in moderate power applications.
  • Wide Voltage Range: Collector-Emitter voltage rating of 40 V allows operation in diverse voltage environments without degradation.
  • Reliable Gain Performance: DC current gain (hFE) ranging from 40 to 300 ensures consistent amplification over the device??s operating range.
  • Fast Switching Speeds: Low storage time supports efficient switching, minimizing losses and improving circuit response times.

JANSP2N2369AU/TR Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 0.8 A
DC Current Gain (hFE) 40?C300 ??
Power Dissipation (Ptot) 625 mW
Transition Frequency (fT) 100 MHz
Package Type TO-92 ??

JANSP2N2369AU/TR Advantages vs Typical Alternatives

This transistor offers a balanced combination of moderate power handling and high gain, providing enhanced switching efficiency and consistency compared to similar NPN devices. Its TO-92 package simplifies PCB layout while maintaining reliable thermal dissipation. The wide voltage and current ratings enable flexible use in various control and amplification circuits, making it a preferred choice for engineers seeking dependability and performance without the complexity of higher-power transistors.

Typical Applications

  • Signal amplification in audio and low-frequency circuits requiring stable gain and low distortion.
  • Switching applications in industrial control systems where reliable on/off operation is essential.
  • Driver stages for relays and solenoids, benefiting from its moderate collector current rating.
  • General-purpose transistor functions in consumer electronics for cost-effective, compact designs.

JANSP2N2369AU/TR Brand Info

The JANSP2N2369AU/TR is a product from a reputable semiconductor brand known for producing robust and reliable discrete components. This transistor is part of their industrial-grade lineup, engineered to meet rigorous quality standards and ensure long-term stability under typical operating conditions. The brand focuses on delivering components that support efficient circuit design and reliable performance in demanding environments.

FAQ

What is the maximum collector current for this transistor?

The maximum continuous collector current for this device is 0.8 A. This allows it to handle moderate power levels suitable for switching and amplification in a variety of applications.

What package type does this transistor come in?

The transistor is housed in a TO-92 package, which is widely used for ease of mounting and reliable thermal characteristics in compact electronic designs.

What voltage ratings should be observed when using this transistor?

The device supports a collector-emitter voltage of up to 40 V, a collector-base voltage of 60 V, and an emitter-base voltage of 5 V. Operating within these limits ensures safe and reliable function.

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产品中间询盘

How does the current gain (hFE) vary with operating conditions?

The DC current gain ranges from 40 to 300, depending on the collector current and temperature. This wide gain range allows flexibility for amplification purposes while maintaining stable operation.

Can this transistor be used for high-frequency applications?

With a transition frequency of approximately 100 MHz, this transistor is suitable for low to moderate frequency switching and amplification tasks but is not intended for very high-frequency RF applications.

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