MSR2N3637UB/TR Overview
The MSR2N3637UB/TR is a high-performance N-channel MOSFET designed for industrial power switching and efficient load management. It features a low on-resistance that minimizes conduction losses, enabling enhanced energy efficiency and thermal performance in demanding applications. With robust voltage and current handling capabilities, this device supports reliable operation in power conversion, motor control, and power supply circuits. The component is offered in a compact package ideal for space-constrained designs, making it a versatile choice for engineers and sourcing specialists aiming to optimize system efficiency and reliability. For detailed technical data and support, visit IC Manufacturer.
MSR2N3637UB/TR Key Features
- Low On-Resistance: Reduces power loss and increases system efficiency by minimizing conduction losses under high load currents.
- High Current Handling: Supports substantial continuous drain current, enabling use in high-power industrial and automotive applications.
- Fast Switching Speed: Optimized gate charge characteristics facilitate rapid switching, improving performance in PWM and DC-DC converter circuits.
- Compact Package Design: Space-saving form factor enhances integration into compact electronic assemblies without compromising thermal dissipation.
MSR2N3637UB/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 30 | V |
| Continuous Drain Current (ID) | 80 | A |
| On-Resistance (RDS(on)) | 3.7 | m?? |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 | V |
| Gate Charge (Qg) | 14 | nC |
| Total Power Dissipation (PD) | 75 | W |
| Operating Junction Temperature (Tj) | -55 to 175 | ??C |
| Package Type | TO-220 | ?? |
MSR2N3637UB/TR Advantages vs Typical Alternatives
This device offers a combination of low on-resistance and high continuous current capacity that enhances efficiency and thermal management compared to typical MOSFET alternatives. Its fast switching speeds reduce switching losses, while the compact TO-220 package simplifies integration into existing designs. These advantages contribute to improved reliability and performance in industrial power applications, making it a preferred option for engineers seeking robust semiconductor solutions.
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Typical Applications
- Power management in industrial motor drives, enabling efficient control of high current loads with minimal energy loss.
- Switching element in DC-DC converters where rapid switching and low conduction losses are critical.
- Load switching in automotive electronic systems requiring high current handling and thermal stability.
- General purpose power switching in industrial automation and control circuits that demand reliable and efficient semiconductor components.
MSR2N3637UB/TR Brand Info
The MSR2N3637UB/TR is manufactured by a leading semiconductor supplier specializing in power MOSFETs optimized for industrial and automotive markets. The product line emphasizes high-quality fabrication standards, reliability, and consistent performance under harsh operating conditions. This device reflects the brand??s commitment to delivering robust, energy-efficient solutions that meet rigorous industry requirements and support long-term system stability.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The maximum drain-source voltage (VDS) rating is 30 volts, which defines the highest voltage the MOSFET can safely withstand between the drain and source terminals during operation.
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How does the low on-resistance benefit circuit performance?
Low on-resistance reduces conduction losses when the MOSFET is switched on, leading to higher efficiency, less heat generation, and improved overall energy savings in power management circuits.
Is this MOSFET suitable for high-frequency switching applications?
Yes, the device??s optimized gate charge and switching characteristics enable fast switching speeds, making it appropriate for high-frequency power conversion and switching regulators.
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What package type is used and how does it affect thermal management?
The MOSFET is housed in a TO-220 package, which provides efficient heat dissipation and ease of mounting, supporting thermal stability in high-power environments.
Can this MOSFET be used in automotive applications?
Given its high current rating, robust thermal limits, and reliable switching characteristics, this component is well-suited for automotive electronic systems requiring dependable power switching.
