JANS2N2221UA/TR NPN Transistor by JAN – High Gain, TO-18 Metal Can Package

  • This transistor amplifies and switches electronic signals, enabling efficient circuit control and signal processing.
  • Its voltage rating supports reliable operation under typical electronic conditions, ensuring stable performance.
  • The compact package reduces board space, facilitating compact device designs and easier integration.
  • Ideal for switching tasks in power management circuits, it helps optimize energy use and system responsiveness.
  • Manufactured under controlled processes, it offers consistent quality and dependable long-term operation.
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产品上方询盘

JANS2N2221UA/TR Overview

The JANS2N2221UA/TR is a high-performance, NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Manufactured to military standards, this transistor delivers consistent electrical characteristics, ensuring reliable operation in demanding environments. With a maximum collector current of 600 mA and a collector-emitter voltage rating of 40 V, it suits a variety of industrial and commercial uses. Its robust construction and tightly controlled parameters make it an ideal choice for precision circuits requiring stable gain and switching performance. For detailed procurement options and datasheets, visit IC Manufacturer.

JANS2N2221UA/TR Key Features

  • High collector current capacity: Supports up to 600 mA, enabling effective handling of moderate power loads in amplification and switching circuits.
  • Wide voltage tolerance: Collector-emitter voltage rating of 40 V allows operation under a broad range of voltage conditions, enhancing design flexibility.
  • Military-grade reliability: Produced to JAN (Joint Army-Navy) specifications, offering enhanced durability and performance consistency in harsh environments.
  • Consistent DC current gain: Maintains a gain (hFE) between 40 to 300, ensuring predictable amplification characteristics across the device batch.

JANS2N2221UA/TR Technical Specifications

ParameterValue
Transistor TypeNPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vceo)40 V
Collector Current (Ic)600 mA
Power Dissipation (Pd)800 mW
DC Current Gain (hFE)40 to 300
Transition Frequency (fT)300 MHz (typical)
Package TypeTO-18 Metal Can
Operating Temperature Range-55??C to +200??C
Base-Emitter Voltage (Vbe)5 V

JANS2N2221UA/TR Advantages vs Typical Alternatives

This transistor provides a robust balance of voltage, current, and gain suitable for many industrial applications, outperforming typical small-signal transistors with its military-grade certification. Its superior reliability, wide operating temperature range, and consistent gain characteristics make it more dependable in critical systems compared to commercial-grade alternatives. The metal can package further enhances thermal performance and mechanical durability.

Typical Applications

  • Signal amplification in low to medium power analog circuits, where stable gain and low noise are essential for accurate signal processing.
  • Switching components in industrial control systems, providing reliable on/off operation with moderate load currents.
  • Driver stages for relay and solenoid actuators, benefiting from the transistor??s current handling and switching speed.
  • General-purpose switching in military and aerospace electronics, leveraging the device’s MIL-PRF-19500 compliance for harsh environment reliability.

JANS2N2221UA/TR Brand Info

The JANS2N2221UA/TR is produced under the Joint Army-Navy (JAN) specification, a hallmark of stringent quality and reliability standards for semiconductor devices. This specific transistor model is recognized for its rugged construction and stable performance, making it a preferred choice among defense contractors and industrial engineers. Its compliance with MIL-PRF-19500 ensures that it meets the demanding requirements of military and aerospace applications, supported by consistent manufacturing processes and thorough testing protocols.

FAQ

What is the maximum collector current for this transistor?

The maximum continuous collector current for this transistor is rated at 600 mA. This allows it to handle moderate power loads commonly found in switching and amplification circuits without compromising reliability.

Can this transistor operate in high-temperature environments?

Yes, the device is specified to operate within a temperature range from -55??C up to +200??C. This wide operating range makes it suitable for harsh environments, including military and aerospace applications.

What type of package does this transistor come in?

This transistor is housed in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical protection, contributing to its durability in stressful operating conditions.

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产品中间询盘

Is this transistor suitable for RF applications?

With a typical transition frequency (fT) of approximately 300 MHz, this transistor can be used in low to moderate frequency RF applications, although it is primarily designed for general-purpose amplification and switching.

How does the military specification impact the device quality?

Manufacturing to the JAN (Joint Army-Navy) specification means the transistor undergoes rigorous screening and testing to ensure high reliability, consistency, and durability, exceeding commercial standards and making it suitable for mission-critical applications.

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