JANS2N3499L Overview
The JANS2N3499L is a high-performance NPN bipolar junction transistor (BJT) specifically designed for rugged, military-grade applications requiring reliable switching and amplification. Built to meet stringent JEDEC and JAN standards, this transistor offers dependable operation within harsh environments. Its robust design supports medium power handling with excellent gain characteristics, making it suitable for industrial and defense electronics. Sourced from the trusted IC Manufacturer, this component ensures consistent quality and long-term availability for system integrators and engineers.
JANS2N3499L Key Features
- High voltage rating: Supports collector-emitter voltages up to 100V, enabling use in demanding power switching circuits.
- Moderate collector current: Provides continuous collector current up to 1.5A, suitable for medium power amplification and switching.
- Enhanced gain performance: Offers a DC current gain (hFE) range that ensures efficient signal amplification with low distortion.
- JEDEC JAN military standard compliance: Guarantees reliable operation under extreme environmental and electrical conditions.
JANS2N3499L Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN Bipolar Junction | ?C |
| Collector-Emitter Voltage (V_CEO) | 100 | V |
| Collector-Base Voltage (V_CBO) | 120 | V |
| Emitter-Base Voltage (V_EBO) | 5 | V |
| Collector Current (I_C) | 1.5 | A |
| Gain Bandwidth Product (f_T) | 100 | MHz |
| DC Current Gain (hFE) | 20 to 70 | ?C |
| Power Dissipation (P_tot) | 20 | W |
| Operating Temperature Range | -55 to +200 | ??C |
| Package Type | TO-39 Metal Can | ?C |
JANS2N3499L Advantages vs Typical Alternatives
This transistor delivers superior reliability and stable electrical performance under high voltage and temperature conditions, standing out from typical commercial-grade alternatives. Its JEDEC JAN military certification ensures enhanced durability and consistent gain, which are critical for aerospace and defense electronics. The metal TO-39 package contributes to better thermal dissipation and mechanical robustness, facilitating longer device life and system reliability.
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Typical Applications
- Military and aerospace switching circuits requiring rugged, high-voltage transistors that operate reliably across wide temperature ranges and harsh environments.
- Medium power linear amplifiers in industrial control systems, benefiting from stable gain and moderate power handling.
- High-reliability signal amplification stages in communication equipment where consistent transistor parameters are essential.
- General-purpose switching applications in defense-grade electronics that demand JEDEC JAN compliance and robust packaging.
JANS2N3499L Brand Info
The JANS2N3499L transistor is produced under strict military standards to meet the rigorous requirements of defense and high-reliability sectors. The ??JAN?? designation indicates compliance with Joint Army-Navy certification, ensuring the device??s performance under extreme operational conditions. Manufactured by a reputable semiconductor supplier, this component is part of a legacy series known for dependable quality and long-term availability, supporting engineers in designing robust, mission-critical electronics.
FAQ
What is the maximum collector current rating of this transistor?
The device supports a maximum continuous collector current of 1.5 amperes, making it suitable for medium power applications that require reliable current handling without thermal or electrical stress.
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What package does this transistor come in, and why is it important?
This transistor is housed in a TO-39 metal can package, which provides excellent thermal conductivity and mechanical protection. This packaging supports enhanced heat dissipation and durability, crucial for high-reliability environments.
How does the JANS2N3499L ensure reliability in harsh environments?
It complies with JEDEC JAN military standards, which certify the device for operation under extreme temperatures, vibrations, and electrical stresses. This ensures the transistor maintains stable performance in rugged industrial and defense applications.
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What is the typical DC current gain range for this transistor?
The DC current gain (hFE) ranges from 20 to 70, allowing efficient signal amplification with low distortion, suitable for a variety of switching and linear amplification tasks in industrial circuits.
Can this transistor be used in high-frequency applications?
With a gain bandwidth product (fT) of approximately 100 MHz, the transistor is capable of handling moderate frequency signals, making it appropriate for many control and communication applications, though it is not designed for ultra-high frequency RF use.
