JANSF2N2222AL NPN Transistor by JANS – General Purpose Amplifier, TO-92 Package

  • This transistor provides efficient switching and amplification, enabling improved circuit control and performance.
  • Featuring a key specification that supports reliable current handling, it ensures stable operation under varying loads.
  • The compact package design offers board-space savings, facilitating integration into densely populated electronic assemblies.
  • Ideal for signal amplification in low-power devices, it enhances overall device responsiveness and efficiency.
  • Manufactured to meet stringent quality standards, it delivers consistent reliability in diverse operating conditions.
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JANSF2N2222AL Overview

The JANSF2N2222AL is a high-performance NPN bipolar junction transistor designed for robust switching and amplification applications. Known for its reliability and consistent gain characteristics, this transistor is widely used in industrial and military-grade circuits requiring dependable operation under varying conditions. Featuring a maximum collector current of 800mA and a voltage rating suitable for low to medium power applications, it offers engineers a versatile component for signal processing and control tasks. This device is manufactured under stringent quality controls, ensuring stable performance and long-term durability. For precision electronic designs, IC Manufacturer provides a trusted source for this transistor model.

JANSF2N2222AL Key Features

  • High Collector Current Capacity: Supports up to 800mA, enabling effective drive of loads and switching in power management circuits.
  • Moderate Voltage Ratings: Collector-Emitter voltage rating ensures safe operation within typical low to medium voltage industrial environments.
  • Consistent DC Current Gain (hFE): Offers reliable amplification with typical gain values enhancing signal integrity in analog applications.
  • Enhanced Thermal Stability: Designed to maintain performance across temperature variations, increasing device lifespan and circuit reliability.

JANSF2N2222AL Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vceo) 40 V
Collector-Base Voltage (Vcbo) 75 V
Emitter-Base Voltage (Vebo) 6 V
Collector Current (Ic) 800 mA
DC Current Gain (hFE) 100?C300 Dimensionless
Transition Frequency (fT) 250 MHz
Power Dissipation (Ptot) 625 mW
Junction Temperature (Tj) 200 ??C

JANSF2N2222AL Advantages vs Typical Alternatives

This transistor offers superior current handling and voltage endurance compared to many standard small-signal transistors, making it ideal for demanding switching and amplification tasks. Its stable gain and thermal resilience provide engineers with reliable performance that reduces design complexities. The device??s robust construction ensures enhanced longevity and consistent operation in industrial environments, offering a dependable alternative to generic transistors lacking specified reliability standards.

Typical Applications

  • General-purpose switching and amplification in electronic circuits, including signal amplification and load driving in industrial control systems.
  • Low to medium power linear and switching amplifiers, where high gain and current capacity are required.
  • Driver stages for relay, lamp, and LED circuits, benefiting from its moderate voltage and current capabilities.
  • Signal processing modules in instrumentation and measurement equipment, where thermal stability and gain consistency are critical.

JANSF2N2222AL Brand Info

The JANSF2N2222AL is a product offered by a leading semiconductor manufacturer, recognized for stringent quality assurance and adherence to military and industrial standards. This transistor is part of a well-established line of bipolar junction transistors tailored for mission-critical applications. The brand ensures full traceability and compliance with rigorous testing protocols, making it a preferred choice for engineers requiring proven reliability and performance in harsh operating conditions.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this NPN transistor is 800 milliamps (mA). This rating allows it to handle moderate current loads safely, making it suitable for switching and amplification in various electronic circuits.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency (fT) of approximately 250 MHz, this device supports operation in moderate to high-frequency applications. It is suitable for RF amplification and switching circuits within this frequency range.

What are the voltage limits to consider when using this transistor?

The transistor??s collector-emitter voltage rating is 40 volts, and the collector-base voltage rating is 75 volts. It is important to operate within these limits to prevent breakdown and ensure reliable performance.

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How does the device perform under temperature variations?

This transistor is designed for enhanced thermal stability, with a maximum junction temperature rating of 200??C, allowing it to maintain performance and reliability under varying thermal conditions typical in industrial environments.

Is this transistor suitable for military or aerospace applications?

Yes, the device is manufactured to meet military-grade standards, offering high reliability, traceability, and quality control suited for mission-critical aerospace and defense applications.

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