JANSM2N3501UB/TR Overview
The JANSM2N3501UB/TR is a high-performance NPN bipolar junction transistor (BJT) designed for a broad range of switching and amplification applications. Featuring a robust collector-emitter voltage rating and reliable current gain characteristics, this transistor ensures efficient switching in industrial and consumer electronics. Its TO-92 package supports easy integration into various circuit designs, offering durability and consistent electrical performance. Engineers and sourcing specialists benefit from its balance of power handling and switching speed, ideal for signal amplification and general-purpose use. Available through IC Manufacturer, this device meets industry standards for quality and reliability.
JANSM2N3501UB/TR Key Features
- High collector-emitter voltage (VCE): Supports up to 60 V, enabling use in medium-voltage circuits for versatile applications.
- Collector current capability: Handles continuous collector currents up to 0.8 A, suitable for moderate power switching tasks.
- Gain bandwidth product: Ensures reliable amplification with a typical hFE gain range of 40 to 300, critical for signal integrity.
- Low saturation voltage: Minimizes power loss during switching, enhancing overall circuit efficiency and thermal performance.
JANSM2N3501UB/TR Technical Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 60 | V |
| Collector-Base Voltage | VCBO | 60 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current – Continuous | IC | 0.8 | A |
| Power Dissipation | Ptot | 0.625 | W |
| DC Current Gain (hFE) | hFE | 40-300 | ?? |
| Transition Frequency | fT | 100 | MHz |
| Operating Junction Temperature | TJ | -55 to +150 | ??C |
JANSM2N3501UB/TR Advantages vs Typical Alternatives
This transistor stands out with its combination of high voltage tolerance and moderate current handling, making it suitable for a wide range of industrial switching and amplification tasks. Compared to typical alternatives, it offers a broad gain range and low saturation voltage, which leads to improved efficiency and reliability in circuits. Its TO-92 packaging facilitates easy mounting and replacement, supporting streamlined integration in various system designs.
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Typical Applications
- Signal amplification in low to medium power circuits, where stable gain and voltage handling are required for precise operation.
- Switching applications in automation and control systems, leveraging its reliable collector current and voltage ratings.
- General-purpose low noise amplifier stages in audio or sensor interfaces, benefiting from its frequency response.
- Driver circuits for relays and small motors, utilizing its power dissipation and saturation voltage characteristics.
JANSM2N3501UB/TR Brand Info
The JANSM2N3501UB/TR is produced by a reputable semiconductor manufacturer known for delivering reliable and high-quality discrete components. This transistor is part of a series designed to meet stringent industrial standards, providing engineers with dependable options for both design flexibility and manufacturing consistency. The brand emphasizes robust testing and quality assurance, ensuring that each device performs as specified under diverse operating conditions.
FAQ
What is the maximum voltage rating for this transistor?
The maximum collector-emitter voltage rating for this transistor is 60 volts. This allows it to operate safely in medium-voltage circuits typical of industrial and general-purpose applications without risk of breakdown.
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What current can this device handle continuously?
This transistor supports a continuous collector current of up to 0.8 amperes, making it suitable for moderate power switching and amplification tasks within its specified thermal limits.
What package type is used for this transistor?
The transistor is housed in a TO-92 package, which is a standard through-hole package known for ease of handling, soldering, and replacement in various electronic designs.
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What is the typical DC current gain range?
The device exhibits a DC current gain (hFE) ranging typically from 40 to 300, which supports a wide variety of amplification requirements while maintaining stable performance.
Can this transistor be used in high-frequency applications?
With a transition frequency of approximately 100 MHz, this transistor is suitable for many moderate-frequency applications, including switching and low noise amplification, though it may not be ideal for very high-frequency RF circuits.






