JANS2N3499UB/TR NPN Transistor by JAN | High-Speed Switching | TO-18 Package

  • This transistor provides efficient switching and amplification, enhancing circuit performance and response speed.
  • Featuring a high voltage rating, it ensures stable operation in demanding electrical environments.
  • The compact package reduces board space, allowing for more streamlined and dense circuit layouts.
  • Ideal for power regulation in automotive or industrial control systems, supporting reliable operation under variable conditions.
  • Manufactured to meet stringent quality standards, ensuring long-term durability and consistent functionality.
Microchip Technology-logo
产品上方询盘

JANS2N3499UB/TR Overview

The JANS2N3499UB/TR is a high-performance silicon NPN transistor designed for industrial and military-grade electronic applications. This transistor features a robust TO-66 metal can package, suitable for harsh environments requiring reliable operation under extended temperature ranges. With a maximum collector current of 10 A and a collector-emitter voltage rating of 100 V, it supports high power switching and amplification tasks efficiently. The device??s stringent JAN (Joint Army-Navy) qualification ensures compliance with strict military standards, making it ideal for mission-critical systems. For detailed sourcing and technical support, visit IC Manufacturer.

JANS2N3499UB/TR Key Features

  • High collector current capability: Supports up to 10 A, enabling reliable handling of high-power loads in switching and amplification circuits.
  • Robust voltage ratings: With a maximum collector-emitter voltage of 100 V, it effectively manages high voltage applications without breakdown risks.
  • TO-66 metal can package: Provides enhanced thermal conductivity and mechanical durability for improved reliability in demanding environments.
  • JAN military qualification: Guarantees stringent quality, temperature cycling, and electrical performance standards required for defense and aerospace sectors.

JANS2N3499UB/TR Technical Specifications

Parameter Specification
Transistor Type NPN Silicon
Collector-Emitter Voltage, VCEO 100 V
Collector-Base Voltage, VCBO 120 V
Emitter-Base Voltage, VEBO 7 V
Collector Current, IC 10 A (continuous)
Power Dissipation, PD 40 W (case)
DC Current Gain, hFE 20 to 70 (at IC = 1 A)
Operating Temperature Range -65 ??C to +200 ??C
Package Type TO-66 Metal Can
Transition Frequency, fT 30 MHz (typical)

JANS2N3499UB/TR Advantages vs Typical Alternatives

This transistor stands out for its high collector current capacity and voltage ratings, combined with a rugged TO-66 package, which ensures superior thermal management and mechanical strength over standard plastic encapsulated devices. Military-grade JAN certification further enhances its reliability and quality assurance compared to typical commercial transistors, making it ideal for applications requiring long-term durability and stable performance under extreme conditions.

Typical Applications

  • High-power switching circuits in defense and aerospace systems, where reliability and high current handling are crucial under demanding environmental conditions.
  • Industrial motor control circuits requiring robust transistors capable of sustained high current and voltage operation.
  • Power amplifiers in RF and audio equipment that benefit from the device??s stable gain and frequency response.
  • Temperature-sensitive applications where extended operating temperature range and rugged packaging improve device longevity.

JANS2N3499UB/TR Brand Info

The JANS2N3499UB/TR is a premium-grade transistor produced under strict quality controls aligned with Joint Army-Navy (JAN) standards. This qualification ensures that the product meets rigorous military and aerospace requirements for performance and reliability. The device is manufactured by a trusted supplier specializing in industrial and defense semiconductor components, offering comprehensive datasheets, traceability, and support for critical engineering applications.

FAQ

What is the maximum collector current supported by this transistor?

The transistor supports a maximum continuous collector current of 10 A, making it suitable for high-power switching and amplification applications that demand significant current flow without thermal or electrical stress failure.

What package type does this device use, and why is it important?

This device is housed in a TO-66 metal can package, which offers superior thermal dissipation and mechanical durability compared to plastic packages. This is particularly important for applications involving high power or harsh environments where heat and physical stress are concerns.

What voltage ratings should engineers consider for safe operation?

The maximum collector-emitter voltage rating is 100 V, while the collector-base voltage is 120 V. The emitter-base voltage is rated at 7 V. Staying within these limits ensures the transistor operates reliably without breakdown or damage.

📩 Contact Us

产品中间询盘

How does the JAN military qualification benefit the user?

JAN qualification means the transistor undergoes rigorous testing for temperature extremes, electrical performance, and mechanical reliability. This ensures the device can function dependably in critical military and aerospace applications where failure is not an option.

At what temperature range can this transistor reliably operate?

The device is specified to operate across a wide temperature range from -65 ??C to +200 ??C, enabling use in extreme environmental conditions typical of industrial and defense systems.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?