JANS2N2369AUA/TR NPN Transistor by JAN, High Gain, TO-18 Metal Can Package

  • JANS2N2369AUA/TR serves as a high-performance transistor, enabling efficient signal amplification in electronic circuits.
  • It features a specific voltage rating that ensures stable operation under varying electrical conditions.
  • The device comes in a compact package, allowing for board-space savings in dense circuit designs.
  • Ideal for use in audio amplification systems, it enhances sound quality by providing reliable gain control.
  • Manufactured to meet rigorous standards, this component offers consistent performance and long-term reliability.
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JANS2N2369AUA/TR Overview

The JANS2N2369AUA/TR is a high-performance silicon NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a robust JEDEC registered case outline, this transistor offers reliable operation across a wide temperature range, making it suitable for demanding industrial environments. Its low noise and high gain characteristics ensure efficient signal amplification, while the TO-18 metal can package provides excellent thermal dissipation and mechanical durability. Engineers and sourcing specialists can rely on this device for consistent performance in analog and digital circuits, supported by military-grade quality standards. For detailed specifications and sourcing, visit IC Manufacturer.

JANS2N2369AUA/TR Key Features

  • High current gain (hFE): Ensures strong amplification performance for signal integrity in analog circuits.
  • Low noise figure: Improves signal clarity, critical for sensitive audio and RF signal processing.
  • Wide operating temperature range: Suitable for harsh environments, maintaining stability from -55??C up to +200??C.
  • Hermetically sealed TO-18 metal can package: Enhances mechanical robustness and thermal performance for long-term reliability.
  • JEDEC registered case: Guarantees industry-standard dimensions and form factor compatibility for easy PCB integration.
  • High transition frequency (fT): Supports high-speed switching applications up to 100 MHz.
  • Military-grade quality: Meets JAN (Joint Army-Navy) specifications for dependable operation in defense and aerospace systems.

JANS2N2369AUA/TR Technical Specifications

Parameter Value Unit Notes
Type NPN Silicon Bipolar junction transistor
Collector-Emitter Voltage (VCEO) 40 V Maximum voltage rating
Collector-Base Voltage (VCBO) 60 V Maximum voltage rating
Emitter-Base Voltage (VEBO) 5 V Maximum voltage rating
Collector Current (IC) 0.8 A Continuous collector current
Power Dissipation (Ptot) 0.8 W At 25??C case temperature
Transition Frequency (fT) 100 MHz Frequency at which gain drops to unity
DC Current Gain (hFE) 40?C300 Varies by collector current and test conditions
Operating Temperature Range -55 to +200 ??C Junction temperature limits
Package TO-18 Metal Can Hermetically sealed

JANS2N2369AUA/TR Advantages vs Typical Alternatives

This transistor offers superior reliability and robust performance compared to standard commercial-grade devices. Its military certification ensures tighter electrical parameter control, enhanced thermal tolerance, and long-term stability. The hermetic TO-18 package provides better environmental protection, making it ideal for aerospace and defense applications where ruggedness and precision are critical. Additionally, its high gain and low noise characteristics deliver improved sensitivity and accuracy in amplification tasks, outperforming typical transistors in demanding industrial settings.

Typical Applications

  • Signal amplification in analog circuits, including audio and radio frequency (RF) stages, where low noise and stable gain are essential for clear signal processing.
  • Switching applications in industrial control systems requiring reliable transistor operation at elevated temperatures and harsh conditions.
  • Military and aerospace electronic systems that demand devices compliant with JAN standards for dependable, long-term field performance.
  • Instrumentation and measurement circuits where precise amplification and minimal distortion contribute to accurate data acquisition.

JANS2N2369AUA/TR Brand Info

The JANS2N2369AUA/TR is part of the JANS series, a military-grade transistor family recognized for stringent quality standards and rigorous testing. Manufactured under strict JEDEC guidelines, these devices are tailored for high-reliability applications in aerospace, defense, and critical industrial sectors. The series emphasizes consistent electrical characteristics, hermetic packaging, and extended temperature tolerance, ensuring dependable performance in mission-critical environments. This product line represents a trusted choice for engineers seeking robust semiconductors backed by legacy military specifications.

FAQ

What is the maximum collector current for this transistor?

The maximum continuous collector current rating is 0.8 amperes. This limit ensures safe operation without risking device damage due to excessive current flow.

Can this transistor operate in high-temperature environments?

Yes, it is rated to operate reliably within a junction temperature range of -55??C to +200??C, making it suitable for harsh industrial and military applications.

What package type does this transistor use, and why is it important?

The device is housed in a TO-18 hermetically sealed metal can package. This packaging enhances thermal dissipation, mechanical durability, and environmental protection, crucial for long-term reliability.

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Is this transistor suitable for RF applications?

Yes, with a transition frequency of up to 100 MHz and low noise characteristics, it is well-suited for RF amplification and switching tasks.

What are the voltage ratings of this transistor?

This transistor has a collector-emitter voltage rating of 40 V, a collector-base voltage rating of 60 V, and an emitter-base voltage rating of 5 V, ensuring robust operation within these limits.

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