JANSR2N2222AUB NPN Transistor by JAN | General Purpose Amplifier | TO-18 Package

  • This transistor amplifies and switches electronic signals, enabling efficient circuit control and operation.
  • Its maximum voltage rating ensures safe performance under specified electrical conditions, preventing damage.
  • The compact package type allows for board-space savings in densely populated electronic assemblies.
  • Ideal for signal amplification in small devices, it helps maintain stable performance in tight spaces.
  • Manufactured under controlled processes, it offers consistent reliability for long-term electronic applications.
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JANSR2N2222AUB Overview

The JANSR2N2222AUB is a high-performance NPN bipolar junction transistor (BJT) designed for robust switching and amplification in industrial and military-grade applications. Manufactured to meet stringent military standards, this transistor offers reliable operation across a wide temperature range, ensuring durability under harsh environmental conditions. Its low noise and high gain characteristics make it ideal for precision analog circuits and signal amplification tasks. The device is housed in a TO-92 plastic package with a unique configuration that facilitates easy integration into diverse electronic assemblies. For detailed technical support and sourcing, visit IC Manufacturer.

JANSR2N2222AUB Key Features

  • High Current Handling: Supports collector currents up to 800 mA, enabling efficient switching in power control applications.
  • Wide Voltage Range: Collector-emitter voltage rating of 40 V ensures compatibility with various industrial voltage levels.
  • Military-Grade Reliability: Built to meet JANS (Joint Army-Navy Specification) standards, guaranteeing enhanced durability and performance under extreme conditions.
  • Low Noise Operation: Suitable for low-level signal amplification, improving overall circuit accuracy and fidelity.

JANSR2N2222AUB Technical Specifications

Parameter Value Unit
Transistor Type NPN Bipolar Junction ?C
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 800 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 100 ?C 300 ?C
Transition Frequency (fT) 250 MHz
Operating Temperature Range -55 to +150 ??C
Package TO-92 Plastic ?C

JANSR2N2222AUB Advantages vs Typical Alternatives

This military-spec transistor provides enhanced reliability and performance compared to standard commercial 2N2222 devices. Its higher voltage and current ratings, combined with stringent environmental testing, ensure robust operation in demanding industrial and defense systems. The low noise and high gain characteristics improve signal integrity, making it a superior choice for precision amplification and switching tasks. Its proven ruggedness translates to longer service life and fewer failures in critical applications.

Typical Applications

  • Signal Amplification: Ideal for low-noise amplification in analog circuits, improving signal quality in instrumentation and communication systems.
  • Switching Circuits: Efficiently handles switching loads in industrial control and automation equipment.
  • Driver Stages: Serves as an effective driver transistor in relay and solenoid control.
  • General-Purpose Amplification: Suitable for a wide range of linear amplifier designs requiring consistent gain and stability.

JANSR2N2222AUB Brand Info

The JANSR2N2222AUB transistor is produced under stringent military standards, emphasizing reliability and performance in harsh operating environments. This product is part of a family of JANS-certified components known for their ruggedness and consistency. It is designed to meet rigorous testing requirements for temperature extremes, vibration, and electrical stress, making it a trusted choice within defense and industrial sectors. The manufacturer maintains strict quality control to ensure that each unit meets or exceeds specified parameters.

FAQ

What is the maximum collector current for this transistor?

The transistor supports a maximum continuous collector current of 800 mA, enabling it to handle moderate power loads in switching and amplification circuits effectively.

Can this transistor operate in extreme temperatures?

Yes, the device is rated for an operating temperature range from -55??C to +150??C, making it suitable for harsh and demanding environments often encountered in military and industrial applications.

What package type does this transistor use?

The transistor is housed in a TO-92 plastic package, which provides a compact footprint and ease of mounting in through-hole PCB designs.

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How does the gain of this transistor compare to commercial variants?

This device offers a DC current gain (hFE) ranging from 100 to 300, providing reliable amplification performance that meets or exceeds many commercial-grade alternatives.

Is this transistor suitable for high-frequency applications?

With a transition frequency (fT) of approximately 250 MHz, this transistor can be utilized in moderate high-frequency circuits, such as RF amplifiers and switching regulators, where reliable operation is required.

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