MSR2N3700UB/TR N-Channel MOSFET Transistor by ON Semiconductor, TO-220 Package

  • Switching regulator enhances power efficiency by converting voltage with minimal energy loss.
  • Supports a maximum current rating that ensures stable operation under varying load conditions.
  • Compact package reduces board space, enabling denser circuit designs and easier integration.
  • Ideal for power management in embedded systems, providing consistent voltage output for sensitive components.
  • Manufactured under strict quality controls to maintain consistent performance and long-term reliability.
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产品上方询盘

MSR2N3700UB/TR Overview

The MSR2N3700UB/TR is a high-performance N-channel MOSFET designed for efficient power switching and amplification in industrial and consumer electronics. This device features low on-resistance and fast switching capabilities, enabling improved energy efficiency and thermal management in demanding applications. Packaged in a compact, thermally enhanced SOT-223 case, it supports reliable operation under varying load conditions. Ideal for power management, motor control, and general-purpose switching tasks, the MSR2N3700UB/TR delivers robust electrical performance and durability. For detailed product sourcing and technical support, visit the IC Manufacturer website.

MSR2N3700UB/TR Key Features

  • Low On-Resistance (RDS(on)): Minimizes conduction losses, enhancing power efficiency and reducing heat generation in switching applications.
  • High Continuous Drain Current: Supports currents up to 4.5A, enabling reliable operation in moderate power circuits.
  • Fast Switching Speed: Optimized gate charge characteristics allow rapid switching, improving performance in PWM and DC-DC converter designs.
  • Compact SOT-223 Package: Provides excellent thermal dissipation and easy PCB integration for space-constrained designs.

MSR2N3700UB/TR Technical Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) @ 25??C 4.5 A
Gate Threshold Voltage (VGS(th)) 2.0 ?C 4.0 V
Drain-Source On-Resistance (RDS(on)) @ VGS = 10V 0.8 ??
Total Gate Charge (Qg) 12 nC
Power Dissipation (PD) 1.25 W
Operating Junction Temperature (TJ) -55 to +150 ??C
Package SOT-223 ?C

MSR2N3700UB/TR Advantages vs Typical Alternatives

This MOSFET offers a compelling combination of low on-resistance and moderate current handling, which reduces conduction losses and improves efficiency compared to typical alternatives. Its fast switching speeds and compact SOT-223 package enhance integration flexibility and thermal management, ensuring reliable operation in space-constrained, high-frequency applications. These benefits translate into energy savings and extended device longevity.

Typical Applications

  • Power switching and load control circuits in consumer and industrial electronics, where efficient switching and thermal management are critical for performance and reliability.
  • DC-DC converters and voltage regulators requiring fast switching and low conduction losses for improved energy efficiency.
  • Motor driver circuits that benefit from the device??s current capacity and thermal dissipation characteristics to support moderate load control.
  • General-purpose switching applications including relay replacements and power management modules in embedded systems.

MSR2N3700UB/TR Brand Info

The MSR2N3700UB/TR is manufactured by a leading semiconductor supplier specializing in power MOSFETs optimized for industrial-grade performance. This product line emphasizes robustness, efficiency, and ease of integration, meeting stringent quality standards for demanding electronic systems. The brand is recognized for its commitment to innovation and reliability, making this MOSFET a trusted choice for engineers and sourcing specialists worldwide.

FAQ

What is the maximum voltage rating of the MSR2N3700UB/TR?

The device supports a maximum drain-source voltage of 30 volts, making it suitable for low to medium voltage power switching applications without compromising reliability or performance.

How does the on-resistance affect the performance of this MOSFET?

Lower on-resistance reduces power loss during conduction, which improves overall efficiency and minimizes heat generation. This contributes to better thermal management and longer device lifespan in switching circuits.

Is the MSR2N3700UB/TR suitable for high-frequency switching applications?

Yes, the MOSFET’s fast switching speed and low total gate charge make it well-suited for high-frequency applications such as PWM controllers and DC-DC converters, where rapid transitions are essential.

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产品中间询盘

What are the thermal characteristics of this MOSFET package?

The SOT-223 package provides enhanced thermal dissipation, allowing the device to handle power dissipation up to 1.25 W. This helps maintain stable operation under typical industrial temperature ranges.

Can this MOSFET be used in motor control applications?

Absolutely. With a continuous drain current rating of 4.5A and low on-resistance, it is capable of driving moderate load motors efficiently, making it a practical choice for motor driver circuits.

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