JANSP2N3700UB/TR N-Channel MOSFET Transistor by JANSP | TO-220 Package

  • This device functions as a high-speed transistor, enabling efficient switching and amplification in circuits.
  • It features a voltage rating that supports robust performance under demanding electrical conditions.
  • The compact package design allows for effective board-space savings in dense electronic assemblies.
  • JANSP2N3700UB/TR is suitable for power management applications, improving energy control and device stability.
  • Manufactured under strict quality controls, it ensures consistent reliability and long-term operation.
Microchip Technology-logo
产品上方询盘

JANSP2N3700UB/TR Overview

The JANSP2N3700UB/TR is a robust NPN bipolar junction transistor designed for medium power amplification and switching applications. Engineered to deliver reliable performance in industrial and consumer electronics, this transistor supports high collector current and voltage ratings, making it suitable for various signal amplification and switching tasks. Featuring a TO-92 plastic package, it enables easy integration into through-hole PCB designs. This device is ideal for engineers and sourcing specialists seeking a dependable transistor with consistent electrical characteristics and efficient thermal management. For more detailed product information, visit IC Manufacturer.

JANSP2N3700UB/TR Key Features

  • High Collector Current Capacity: Supports up to 800mA collector current, allowing for efficient handling of moderate power loads in amplification or switching circuits.
  • Wide Voltage Range: Collector-emitter voltage rating of 60V ensures compatibility with various industrial voltage levels, enhancing design flexibility.
  • Stable Gain Characteristics: Provides a DC current gain (hFE) ranging from 40 to 300, enabling precision amplification across different operating conditions.
  • TO-92 Package Format: Facilitates easy mounting and soldering in through-hole PCB assembly, simplifying prototyping and production processes.

JANSP2N3700UB/TR Technical Specifications

Parameter Value Unit Notes
Collector-Emitter Voltage (VCEO) 60 V Maximum voltage between collector and emitter
Collector-Base Voltage (VCBO) 75 V Maximum voltage between collector and base
Emitter-Base Voltage (VEBO) 5 V Maximum voltage between emitter and base
Collector Current (Continuous) (IC) 800 mA Maximum continuous collector current
Power Dissipation (PC) 625 mW Maximum power dissipation at 25??C
DC Current Gain (hFE) 40?C300 Unitless Gain range at IC=150mA, VCE=10V
Transition Frequency (fT) 40 MHz Frequency at which gain drops to unity
Operating Junction Temperature (TJ) 150 ??C Maximum junction temperature
Package TO-92 ?? Plastic through-hole package

JANSP2N3700UB/TR Advantages vs Typical Alternatives

This transistor offers a strong balance of voltage tolerance and current handling compared to typical low-power alternatives. Its higher collector-emitter voltage rating and continuous collector current capacity provide enhanced reliability in demanding switching and amplification scenarios. The wide DC current gain range enables versatile gain control, while the TO-92 package supports straightforward integration. These features make it a preferred choice for applications requiring dependable medium-power performance with simple mounting options.

Typical Applications

  • Signal amplification in audio and low-frequency circuits, benefiting from its stable gain and power handling capabilities.
  • Switching devices in control circuits where moderate currents and voltages are present.
  • Driver stages for relay and LED circuits requiring efficient and reliable transistor switching.
  • General-purpose amplification and switching in consumer electronics and industrial control systems.

JANSP2N3700UB/TR Brand Info

The JANSP2N3700UB/TR is part of the semiconductor portfolio offered by IC Manufacturer, known for delivering quality and reliable electronic components for industrial and commercial applications. This transistor model exemplifies their commitment to producing devices that meet stringent electrical and thermal specifications, ensuring consistent performance in various engineering designs. With thorough quality control and compliance to industry standards, this product supports engineers and sourcing specialists in achieving optimal circuit performance.

FAQ

What is the maximum collector current for this transistor?

The maximum continuous collector current for this device is 800mA. This rating ensures that the transistor can handle moderate power loads safely without thermal or electrical breakdown when operated within specified limits.

Which package type does this transistor come in?

This transistor is housed in a TO-92 plastic package, which is common for through-hole mounting. This package facilitates easy hand soldering and PCB integration for both prototyping and volume production.

Can this transistor be used for high-frequency applications?

With a transition frequency of approximately 40MHz, this transistor is suitable for low to moderate frequency applications. It is not optimized for very high-frequency circuits but performs well in audio and basic switching applications.

📩 Contact Us

产品中间询盘

What is the voltage rating between collector and emitter?

The device supports a maximum collector-emitter voltage of 60V. This allows it to operate safely in circuits where the voltage does not exceed this limit, providing reliable switching and amplification functions.

What is the typical DC current gain range, and how does it impact circuit design?

The DC current gain (hFE) of this transistor ranges from 40 to 300, depending on operating conditions. This wide gain range allows engineers to tailor amplification levels and achieve precise control over circuit behavior in amplification and switching tasks.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?