2N4449UA/TR ON Semiconductor NPN Transistor, Switching Amplifier, TO-92 Package

  • This transistor amplifies signals efficiently, enhancing circuit performance in various electronic designs.
  • It features a high-frequency response, enabling reliable operation in RF and communication applications.
  • The compact package reduces board space, allowing for denser circuit layouts and easier integration.
  • In wireless transmitters, its stable gain supports consistent signal strength and clarity.
  • Manufacturing processes ensure consistent quality and dependable operation over extended use.
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2N4449UA/TR Overview

The 2N4449UA/TR is a high-performance NPN transistor designed specifically for switching and amplification applications in industrial electronics. With a focus on reliable operation, it offers a balanced combination of voltage and current ratings suitable for medium-power circuits. This transistor excels in fast switching environments, making it ideal for signal processing and control systems. Its robust construction ensures durability in demanding settings, supporting engineers and sourcing specialists in achieving optimal performance and longevity. For further details and sourcing options, visit IC Manufacturer.

2N4449UA/TR Key Features

  • High Collector-Emitter Voltage: Supports up to 40V, enabling use in various medium-voltage circuits without compromise.
  • Collector Current Capacity: Handles up to 600mA continuous current, ensuring suitability for moderate power switching tasks.
  • Fast Switching Speed: Low transition times reduce delay in signal amplification and switching, enhancing overall circuit efficiency.
  • Thermal Stability: Designed for a maximum junction temperature of 150??C, providing reliable operation under elevated thermal conditions.

2N4449UA/TR Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
Power Dissipation (PD) 625 mW
Transition Frequency (fT) 100 MHz
DC Current Gain (hFE) 100?C300 ??
Junction Temperature (Tj) 150 ??C

2N4449UA/TR Advantages vs Typical Alternatives

This transistor offers a superior balance of voltage handling and current capacity compared to typical small-signal transistors, providing enhanced switching speed and thermal resilience. Its reliable gain characteristics and robust power dissipation rating make it a preferred choice for engineers seeking dependable performance in switching and amplification tasks, outperforming many alternatives in demanding industrial environments.

Typical Applications

  • Signal amplification in control circuits, where consistent gain and fast switching improve system responsiveness and accuracy.
  • Switching elements in power management systems requiring reliable on/off operation at moderate current levels.
  • Driver stages for relay and LED indicators within industrial automation equipment.
  • General-purpose transistor use in amplification and switching for instrumentation and sensor interface circuits.

2N4449UA/TR Brand Info

The 2N4449UA/TR is manufactured under stringent quality controls, ensuring compliance with industry standards for reliability and performance. This product line is recognized for its durability and consistent electrical characteristics, suitable for integration into diverse industrial and commercial electronics. The brand backing this transistor is committed to delivering components that meet rigorous engineering demands, supporting both prototype development and mass production environments.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current for this transistor is 600mA. This rating ensures it can handle moderate power switching loads safely without degradation under specified operating conditions.

Can this transistor operate at high switching frequencies?

Yes, with a transition frequency of approximately 100MHz, this transistor is well-suited for high-speed switching applications, making it effective in fast signal processing and amplification circuits.

What is the maximum voltage this device can withstand between collector and emitter?

The device supports a maximum collector-emitter voltage of 40V, allowing it to operate reliably in medium-voltage circuits commonly found in industrial and control systems.

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How does the transistor perform in high-temperature environments?

Designed for a maximum junction temperature of 150??C, it maintains stable operation in elevated temperature conditions, providing thermal reliability crucial for harsh industrial environments.

Is this device suitable for general-purpose amplification?

Yes, with a DC current gain ranging from 100 to 300, the transistor provides consistent amplification performance, making it suitable for general-purpose use in signal amplification and switching applications.

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