JANTXV2N2906AUA/TR Overview
The JANTXV2N2906AUA/TR is a high-reliability PNP bipolar junction transistor designed for military and aerospace applications requiring stringent quality and performance standards. This transistor features a robust TO-18 hermetic metal can package, ensuring excellent thermal conductivity and mechanical durability. It supports continuous collector currents up to 800 mA and operates at collector-emitter voltages up to 60 V. The device is manufactured to meet JAN (Joint Army-Navy) standards, making it suitable for use in harsh environments where reliability and stability are critical. For sourcing and detailed product specifications, visit IC Manufacturer.
JANTXV2N2906AUA/TR Key Features
- High Collector Current Capacity: Supports continuous collector currents up to 800 mA, enabling effective switching and amplification in demanding circuits.
- Robust Voltage Handling: With a maximum collector-emitter voltage of 60 V, it provides reliable operation in medium voltage applications.
- Hermetic TO-18 Metal Can Package: Ensures excellent environmental protection and thermal dissipation, increasing device reliability in extreme conditions.
- JAN Qualification: Meets rigorous military standards for performance and durability, making it ideal for defense and aerospace systems.
JANTXV2N2906AUA/TR Technical Specifications
| Parameter | Specification | Units |
|---|---|---|
| Transistor Type | PNP Bipolar Junction Transistor | ?C |
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current – Continuous (IC) | 800 | mA |
| Power Dissipation (Ptot) | 625 | mW |
| Transition Frequency (fT) | 100 | MHz |
| DC Current Gain (hFE) | 50?C300 | ?C |
| Package Type | TO-18 Hermetic Metal Can | ?C |
| Operating Temperature Range | ?55 to +125 | ??C |
JANTXV2N2906AUA/TR Advantages vs Typical Alternatives
This transistor offers superior reliability and environmental resistance compared to typical commercial-grade devices. Its hermetic metal can package enhances thermal management and mechanical protection, vital for mission-critical applications. The JAN qualification ensures performance consistency under extreme temperature and stress, making it a preferred choice over standard transistors for aerospace and defense sectors. Additionally, its broad gain range and high transition frequency deliver precise signal amplification and switching efficiency.
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Typical Applications
- Military and aerospace electronic systems requiring high-reliability switching and amplification under harsh environmental conditions.
- Signal processing circuits where stable gain and frequency response are essential.
- High-reliability control and instrumentation equipment operating across wide temperature ranges.
- Low-noise preamplifiers in communication and radar systems.
JANTXV2N2906AUA/TR Brand Info
The JANTXV2N2906AUA/TR transistor is manufactured under strict military standards, ensuring compliance with JAN (Joint Army-Navy) requirements for quality and reliability. This product is part of a trusted lineage of semiconductor components designed for defense and aerospace markets, where performance cannot be compromised. The manufacturer employs rigorous screening and testing protocols, guaranteeing each device meets or exceeds operational specifications in demanding applications.
FAQ
What is the maximum collector current for this transistor?
The device supports a maximum continuous collector current of 800 mA, enabling it to handle moderate power loads in switching and amplification circuits.
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What package type does the transistor use, and why is it important?
This transistor is housed in a TO-18 hermetic metal can package, which provides excellent protection against environmental factors such as moisture and mechanical stress, ensuring reliable operation over a wide temperature range.
What voltage ratings are specified for this transistor?
The maximum collector-emitter and collector-base voltages are both rated at 60 V, while the emitter-base voltage is limited to 5 V, defining its safe operating limits within electronic circuits.
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Is this transistor suitable for high-frequency applications?
Yes, with a transition frequency (fT) of approximately 100 MHz, the transistor is well-suited for moderate high-frequency signal amplification and switching tasks.
What standards does this transistor comply with?
The component meets JAN military standards, indicating it has undergone rigorous testing for performance, reliability, and environmental resistance, making it ideal for aerospace and defense applications.
