JAN2N4449UA/TR Diode Rectifier by ON Semiconductor – DO-41 Package

  • This component serves as a diode, providing efficient current rectification to enhance circuit performance.
  • Its voltage rating ensures protection under varying electrical loads, maintaining stable operation in demanding environments.
  • The package offers a compact footprint, enabling space-saving designs on densely populated circuit boards.
  • Suitable for power supply circuits, it helps regulate voltage and prevent reverse currents, improving system reliability.
  • Manufactured under strict quality controls, it delivers consistent performance and long-term durability in applications.
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产品上方询盘

JAN2N4449UA/TR Overview

The JAN2N4449UA/TR is a military-grade silicon NPN transistor designed for high-speed switching and general-purpose amplification. Manufactured to meet stringent JEDEC and MIL-PRF-19500 standards, this transistor offers enhanced reliability and performance under demanding conditions. Its low noise and high gain properties make it ideal for precision electronics, while the rugged TO-92 package ensures durability in harsh environments. Engineers and sourcing specialists will appreciate its consistent electrical characteristics and traceability, making it a dependable choice for aerospace, defense, and industrial applications. For detailed technical inquiries, visit IC Manufacturer.

JAN2N4449UA/TR Key Features

  • High transition frequency: Enables fast switching speeds for improved circuit responsiveness and performance.
  • Low noise operation: Ensures signal integrity in sensitive amplification tasks, reducing interference and distortion.
  • Military-grade reliability: Certified to MIL-PRF-19500 standards, offering enhanced durability and stable operation in extreme conditions.
  • Uniform electrical characteristics: Tight parameter control supports consistent integration across large production runs.

JAN2N4449UA/TR Technical Specifications

Parameter Specification
Type NPN Silicon Transistor
Collector-Emitter Voltage (VCEO) 100 V
Collector Current (IC) 600 mA
Gain Bandwidth Product (fT) 300 MHz (typical)
DC Current Gain (hFE) 100 to 300
Power Dissipation (PD) 625 mW
Noise Figure Low (specific values per test conditions)
Package TO-92 Plastic Encapsulation
Operating Temperature -65??C to +200??C

JAN2N4449UA/TR Advantages vs Typical Alternatives

This transistor excels over standard commercial alternatives by combining military-grade qualification with high-frequency switching capabilities. Its strict adherence to MIL-PRF-19500 ensures superior reliability, making it suitable for mission-critical applications. Additionally, the device??s low noise and consistent gain characteristics provide engineers with improved accuracy and performance in analog signal processing, while the robust packaging enhances longevity and resistance to environmental stress.

Typical Applications

  • High-speed switching circuits requiring reliable performance under extreme environmental conditions, such as aerospace and defense electronics.
  • Low-noise amplifier stages in communication devices where signal clarity is critical.
  • General-purpose amplification in industrial control systems and instrumentation.
  • Robust electronic designs needing components rated for wide temperature ranges and mechanical stress.

JAN2N4449UA/TR Brand Info

The JAN2N4449UA/TR is part of a product line manufactured under strict military specifications, ensuring high reliability and consistency. This brand is recognized for producing semiconductors that meet or exceed JEDEC and MIL-PRF-19500 standards, catering specifically to defense, aerospace, and industrial markets. The device is traceable and tested for performance stability, aligning with industry requirements for rugged, precision components.

FAQ

What makes the JAN2N4449UA/TR suitable for military applications?

The transistor complies with MIL-PRF-19500 standards, ensuring it can withstand extreme temperatures, mechanical stress, and electrical demands typical in military environments. This certification guarantees enhanced reliability and traceability.

Can this transistor be used in high-frequency circuits?

Yes, the device features a high transition frequency of approximately 300 MHz, making it well-suited for high-speed switching and amplification tasks in RF and high-frequency analog circuits.

What are the maximum voltage and current ratings for this transistor?

The maximum collector-emitter voltage is 100 V, and the maximum collector current is rated at 600 mA, allowing it to handle moderately high power levels in various electronic circuits.

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产品中间询盘

How does the TO-92 package benefit this transistor??s applications?

The TO-92 package offers compact size and ease of mounting on standard PCBs, while providing adequate thermal dissipation and mechanical protection, which is essential for reliable operation in diverse environments.

Is the electrical performance consistent across production batches?

Yes, the transistor is manufactured with tight control over electrical parameters, ensuring uniform gain, noise, and switching characteristics, critical for large-scale and precision applications.

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