JANTX2N918UB/TR Overview
The JANTX2N918UB/TR is a high-performance NPN bipolar junction transistor designed for RF and general-purpose amplification applications. This device features a low noise figure and a transition frequency suitable for VHF and UHF operations, making it ideal for communication circuits and signal processing. Its robust construction ensures reliable performance under demanding conditions, including military-grade standards. Sourced from a trusted IC Manufacturer, this transistor offers engineers and sourcing specialists a dependable solution for precision amplification and switching tasks in industrial and defense electronics.
JANTX2N918UB/TR Key Features
- High transition frequency (fT): Enables efficient operation at frequencies up to 250 MHz, improving signal amplification in RF circuits.
- Low noise figure: Minimizes signal distortion, enhancing overall circuit sensitivity and clarity.
- Military-grade reliability: Meets stringent standards ensuring stable performance under harsh environmental conditions.
- Robust TO-18 metal can package: Provides excellent thermal conductivity and mechanical protection for extended device lifespan.
JANTX2N918UB/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN Bipolar Junction Transistor | ?C |
| Collector-Emitter Voltage (VCEO) | 25 | V |
| Collector Current (IC) | 50 | mA |
| Transition Frequency (fT) | 250 | MHz |
| Gain Bandwidth Product | ?C | 250 MHz |
| Noise Figure | Low (typical) | dB |
| Package Type | TO-18 Metal Can | ?C |
| Operating Temperature Range | -55 to +125 | ??C |
JANTX2N918UB/TR Advantages vs Typical Alternatives
This transistor delivers superior high-frequency performance and low noise characteristics compared to standard BJTs, making it highly effective in RF amplification and sensitive signal applications. Its military-grade construction ensures enhanced reliability and thermal stability, which typical commercial transistors may lack. These advantages translate to longer operational life and consistent performance in critical industrial and defense systems.
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Typical Applications
- RF amplifier stages in communication equipment where low noise and high-frequency gain are critical for signal integrity and clarity.
- General-purpose switching in industrial control circuits requiring reliable transistor action under diverse environmental conditions.
- Signal processing modules in test and measurement devices that demand precision and low distortion.
- Military and aerospace systems where ruggedness and adherence to strict quality standards are mandatory.
JANTX2N918UB/TR Brand Info
The JANTX2N918UB/TR is part of a series of military-grade transistors recognized for their consistent quality and performance. Manufactured under rigorous quality controls, this product is tailored for applications demanding durability, precision, and reliability. Its design and packaging reflect a commitment to meet the needs of defense and industrial engineers sourcing components that comply with stringent operational standards.
FAQ
What frequency range is suitable for this transistor?
This device is optimized for operation up to 250 MHz, making it suitable for VHF and UHF frequency bands commonly used in RF amplification and communication circuits.
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How does the TO-18 package benefit the transistor??s performance?
The TO-18 metal can package offers excellent thermal conductivity and mechanical protection, which helps maintain stable operation and longevity under varying thermal and mechanical stresses.
Is this transistor suitable for high-reliability military applications?
Yes, the JANTX2N918UB/TR meets military-grade standards for reliability and environmental tolerance, making it appropriate for use in defense and aerospace systems.
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What is the maximum collector current rating?
The maximum collector current for this transistor is 50 mA, which supports moderate power amplification and switching tasks in typical industrial and RF circuits.
Can this device be used in low-noise amplifier circuits?
Absolutely. Its low noise figure characteristic makes it ideal for low-noise amplifier stages where minimizing signal distortion is critical for performance.







