2N2222AUA/TR NPN Transistor by ON Semiconductor, TO-92 Package, Switching Amplifier

2N2222AUA/TR Overview

The 2N2222AUA/TR is a high-performance NPN bipolar junction transistor designed for general-purpose switching and amplification in industrial and consumer electronics. This transistor offers robust current handling capabilities, making it suitable for low to medium power applications while ensuring reliable operation across a broad range of voltages. Packaged in a compact SOT-23 form factor, it enables efficient PCB space utilization and seamless integration into surface-mount designs. Its consistent gain and high switching speed provide engineers with a dependable component for signal processing and control circuits. For detailed specifications and sourcing, visit IC Manufacturer.

2N2222AUA/TR Key Features

• High Collector Current Capacity: Supports collector currents up to 600 mA, enabling effective switching and amplification of moderate loads in industrial control applications.
• Low Saturation Voltage: Minimizes power dissipation and improves efficiency in switching circuits, which is critical for battery-powered and thermal-sensitive systems.
• Surface-Mount SOT-23 Package: Facilitates compact, automated PCB assembly and reduces board space compared to through-hole counterparts.
• Wide Voltage Range: Operates reliably with collector-emitter voltages up to 40 V, suitable for a broad spectrum of low-voltage applications.

2N2222AUA/TR Technical Specifications

2N2222AUA/TR Advantages vs Typical Alternatives

This transistor offers a compelling balance of high gain, fast switching speed, and low saturation voltage that outperforms many standard NPN transistors in similar voltage and current classes. Its compact surface-mount package enhances assembly efficiency without sacrificing thermal or electrical performance. These factors combine to provide engineers with a reliable, space-saving alternative that excels in power-sensitive and high-frequency industrial applications.

Typical Applications

• Switching and amplification in industrial control circuits where moderate power handling and fast response times are required, such as relay drivers and motor controllers.
• Signal processing in communication devices requiring low noise and stable gain characteristics.
• Low-voltage power regulation and interfacing in embedded systems and microcontroller-based designs.
• General-purpose transistor usage in consumer electronics, including audio amplifiers and sensor interface circuits.

2N2222AUA/TR Brand Info

The 2N2222AUA/TR is produced by a leading semiconductor manufacturer known for high-quality discrete components optimized for industrial and commercial applications. This product line emphasizes reliability, consistent performance, and adherence to stringent quality standards, making it a trusted choice for design engineers and sourcing specialists seeking dependable transistor solutions in surface-mount technology.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current for this transistor is 600 mA, which allows it to drive moderate loads in switching and amplification circuits without risk of damage under specified conditions.

Can the transistor operate at high frequencies?

Yes, it features a transition frequency of approximately 300 MHz, making it suitable for high-speed switching and RF amplification applications within its voltage and current limits.

What package type is used for this transistor and why is it important?

This device comes in a SOT-23 surface-mount package, which is important for saving PCB space, enabling automated assembly, and improving thermal performance compared to traditional through-hole packages.

What voltage levels can this transistor handle safely?

The transistor supports a collector-emitter voltage of up to 40 V and a collector-base voltage of 75 V, allowing it to function reliably in low to medium voltage electronic circuits.

How does the low saturation voltage benefit circuit design?

Low saturation voltage reduces power loss and heat generation during switching, which enhances overall circuit efficiency and prolongs the lifespan of the transistor and surrounding components.