JANTXV2N2906AUBC/TR N-Channel MOSFET Transistor by JAN, TO-220 Package

  • This device functions as a dual N-channel MOSFET, enabling efficient switching and amplification in electronic circuits.
  • Featuring low on-resistance, it minimizes power loss and improves overall energy efficiency during operation.
  • The compact SOT-23 package reduces board space, allowing for more streamlined and dense circuit designs.
  • Ideal for battery-powered applications, it supports longer device run times by conserving energy effectively.
  • Manufactured to meet industry standards, it ensures consistent performance and durability under typical operating conditions.
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JANTXV2N2906AUBC/TR Overview

The JANTXV2N2906AUBC/TR is a precision PNP bipolar junction transistor designed for demanding industrial and military applications. It offers robust performance with a high gain and voltage rating, ensuring reliable operation in high-stress environments. This transistor features a TO-18 metal can package, providing excellent thermal stability and mechanical durability. Ideal for switching and amplification tasks, the device supports stringent quality standards and is sourced from IC Manufacturer known for delivering dependable semiconductor components for critical electronic systems.

JANTXV2N2906AUBC/TR Key Features

  • High Voltage Handling: Supports a collector-emitter voltage of up to 60 V, allowing operation in high-voltage circuits with confidence.
  • Robust Gain Characteristics: Provides a DC current gain (hFE) ranging between 40 and 300, which ensures effective amplification across varying load conditions.
  • Military-Grade Reliability: Manufactured and tested to JAN (Joint Army-Navy) specifications, this transistor guarantees increased operational reliability under harsh conditions.
  • Thermally Stable TO-18 Package: Metal can packaging offers superior heat dissipation and mechanical protection, enhancing device longevity in industrial environments.

JANTXV2N2906AUBC/TR Technical Specifications

Parameter Value
Transistor Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 800 mA
DC Current Gain (hFE) 40 to 300
Transition Frequency (fT) 100 MHz (typical)
Power Dissipation (Ptot) 625 mW
Package Type TO-18 Metal Can
Operating Temperature Range -55??C to +125??C

JANTXV2N2906AUBC/TR Advantages vs Typical Alternatives

This transistor offers superior voltage tolerance and gain performance compared to standard PNP transistors, making it a preferred choice in precision amplification and switching applications. Its military-grade qualification ensures enhanced reliability and durability, particularly in temperature extremes and high-stress environments. The TO-18 metal can package further supports thermal management and mechanical protection, outperforming plastic-encapsulated alternatives.

Typical Applications

  • Switching and signal amplification in military and aerospace systems, where robust performance and reliability are critical under harsh environmental conditions.
  • Industrial control circuits requiring stable gain and voltage handling for precise operation.
  • Analog signal processing applications demanding low noise and consistent transistor characteristics.
  • High-reliability electronic assemblies in communications equipment and instrumentation.

JANTXV2N2906AUBC/TR Brand Info

The JANTXV2N2906AUBC/TR is a product adhering to Joint Army-Navy (JAN) standards, a hallmark of stringent testing and quality assurance for military-grade semiconductors. This brand emphasizes reliability, stability, and performance, making it suitable for mission-critical electronic designs. Originating from a reputable IC Manufacturer, this transistor is part of a trusted portfolio that supports demanding industrial and defense sectors worldwide.

FAQ

What are the key electrical ratings of this transistor?

The transistor supports a maximum collector-emitter voltage of 60 V, collector current up to 800 mA, and power dissipation of 625 mW. It also offers a DC current gain ranging from 40 to 300, suitable for amplification and switching applications.

How does the TO-18 package benefit thermal management?

The TO-18 metal can package provides excellent heat dissipation due to its metal construction, reducing thermal resistance and improving device reliability during continuous operation in demanding environments.

What does the JAN qualification signify for this transistor?

JAN qualification indicates the device meets rigorous military standards for quality, reliability, and performance, including extended temperature range operation and enhanced mechanical durability, making it suitable for defense and aerospace applications.

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Is this transistor suitable for high-frequency applications?

Yes, with a typical transition frequency of about 100 MHz, this transistor is well-suited for moderate high-frequency analog and switching circuits, ensuring effective signal amplification and switching speed.

What are the typical operating temperature limits for this device?

The transistor is rated to operate reliably across a temperature range from -55??C to +125??C, enabling its use in harsh environmental conditions common in military and industrial applications.

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