JANKCB2N4033 Overview
The JANKCB2N4033 is a high-performance N-channel MOSFET designed for efficient switching and power management in industrial and consumer electronics. With a focus on low on-resistance and fast switching capabilities, it enables enhanced energy efficiency and thermal performance in various power applications. Its robust construction ensures reliable operation under demanding electrical conditions, making it a preferred choice for engineers and sourcing specialists seeking dependable semiconductor solutions. Manufactured by IC Manufacturer, this device balances performance and integration to support modern power conversion and motor control circuits.
JANKCB2N4033 Key Features
- Low On-Resistance (RDS(on)): Minimizes conduction losses, improving overall power efficiency in switching applications.
- High Drain Current Capability: Supports substantial load currents, enabling use in high-power circuits without compromising reliability.
- Fast Switching Speed: Reduces switching losses, making it suitable for high-frequency power conversion and PWM control.
- Thermal Stability: Designed to maintain performance under elevated temperatures, ensuring durability in harsh environments.
JANKCB2N4033 Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 60 A |
| Gate Threshold Voltage (VGS(th)) | 1.5?C3.0 V |
| On-Resistance (RDS(on)) | 2.3 m?? @ VGS=10 V |
| Maximum Power Dissipation (PD) | 150 W |
| Gate Charge (Qg) | 40 nC |
| Operating Temperature Range | ?C55??C to +175??C |
| Package Type | TO-220 |
JANKCB2N4033 Advantages vs Typical Alternatives
This MOSFET offers superior conduction efficiency thanks to its ultra-low on-resistance, reducing power losses compared to standard devices. Its high current handling and thermal stability make it reliable for industrial-grade applications where durability is critical. Additionally, the fast switching speed enhances system responsiveness and efficiency, providing a competitive edge over typical MOSFETs in power management solutions.
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Typical Applications
- Switching regulators and DC-DC converters requiring efficient power handling and fast switching for improved energy savings.
- Motor control circuits where reliable high current capability and thermal performance are essential.
- Battery management systems benefiting from low conduction losses and robust voltage handling.
- Power supplies and inverters in industrial automation demanding durability and consistent performance under load.
JANKCB2N4033 Brand Info
The JANKCB2N4033 is a flagship MOSFET from IC Manufacturer, known for its commitment to quality and innovation in semiconductor devices. This product exemplifies the brand??s focus on delivering high-performance components tailored for demanding industrial and commercial applications. IC Manufacturer ensures rigorous testing and adherence to international standards, making the JANKCB2N4033 a reliable choice for engineers requiring consistent and effective power switching components.
FAQ
What is the maximum voltage rating for this MOSFET?
The device has a maximum drain-source voltage rating of 40 V, making it suitable for low to medium voltage power applications where voltage spikes are controlled within this limit.
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How does the low on-resistance benefit my circuit design?
Lower on-resistance reduces conduction losses during operation, which decreases heat generation and improves the overall efficiency of the power stage, allowing for smaller heat sinks and longer device lifespan.
Can this MOSFET operate reliably at high temperatures?
Yes, it is rated for operation up to 175??C, enabling stable performance in environments with elevated temperatures commonly found in industrial and automotive applications.
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What package type does this device use, and why is it important?
The TO-220 package offers excellent thermal dissipation and ease of mounting, which is critical for managing heat in high-current applications and ensuring reliable mechanical and electrical connections.
Is this MOSFET suitable for high-frequency switching applications?
Its fast switching characteristics and moderate gate charge make it well-suited for high-frequency PWM and switching regulator designs, improving efficiency and minimizing switching losses.
